Bevel Edge Passivation for Semiconductor Substrates
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Solution Overview
Problem
The bevel edge of semiconductor substrates is prone to defects due to accumulation and flaking of polymer and metal films during etching processes, leading to particle contamination and yield loss, especially as manufacturers seek to reduce edge exclusion to increase die density.
Innovation Solution
A method involving a bevel processing chamber where a passivation plasma forms a protective layer on the substrate's bevel edge, which is then patterned and used as a mask for cleaning, followed by removal of the passivation layer to expose underlying layers for cleaning, thereby protecting the edge from subsequent processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If manufacturers reduce edge exclusion to increase die density, then productivity increases, but edge defects and particle contamination worsen
Solution Approach 1:
A passivation layer is deposited on the bevel edge before subsequent processing steps. This preliminary protective action prevents polymer and metal film accumulation and flaking during etching and cleaning processes, thereby eliminating edge defects while allowing reduced edge exclusion and increased die density
2Reliability
If polymer layers are deposited on the bevel edge during etching processes, then etching performance is maintained, but the polymer layers eventually weaken and flake off causing particle contamination
Solution Approach 1:
A passivation layer (thin film) is deposited on the bevel edge to replace the problematic polymer layers that flake off. This passivation layer provides the necessary protection during etching while being more stable and less prone to flaking, thereby maintaining etching performance without generating particle contamination
Solution Approach 2:
The chemical composition and properties of the protective layer on the bevel edge are changed from organic polymer (prone to flaking) to a more stable passivation material. This parameter change in the protective layer's material properties eliminates the flaking issue while maintaining the necessary protection during processing
3Quantity of substance
If dielectric and metal films are deposited on the bevel edge, then film coverage is complete, but the films accumulate and flake off during subsequent processing
Solution Approach 1:
A passivation layer is deposited on the bevel edge before subsequent dielectric and metal film deposition. This preliminary protective layer prevents the accumulation and flaking of these films during processing, maintaining both complete coverage and stability without the flaking problem
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces edge defects by creating a controlled environment for passivation and cleaning, ensuring the bevel edge remains intact during processing, thereby improving device yield and reducing particle contamination.
Implementation Method 1
a passivation plasma confined in a peripheral region of the bevel processing chamber is provided
Implementation Method 2
passivation plasma means plasma with deposition chemistry which is capable of forming or depositing a passivation layer
Data Source
AI summary
A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.