Beveled Interconnect Geometry for Dielectric Breakdown Resistance
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Solution Overview
Problem
Dielectric breakdown is a key concern in high-voltage applications of microelectronic devices, particularly in galvanic isolators where conductive elements are separated by dielectric material, leading to reduced device lifetime and increased risk of electrical failure.
Innovation Solution
The implementation of beveled interconnects with obtuse angles in microelectronic devices, which reduce the electric field concentration at corners, thereby minimizing dielectric breakdown and enhancing device longevity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional interconnects with sharp corners are used, then manufacturing is simpler, but electric field concentration at corners causes dielectric breakdown
Solution Approach 1:
The patent changes the geometric parameter of the interconnect corner from a sharp angle to a beveled angle (e.g., 45-degree angle). This parameter modification reduces electric field concentration at the corner, thereby preventing dielectric breakdown and improving reliability without significantly complicating the manufacturing process.
Solution Approach 2:
The patent applies a beveled angle to the interconnect corner, creating a curved or angled transition instead of a sharp corner. This geometric modification smooths the electric field distribution and eliminates the concentration effect that leads to dielectric breakdown, while remaining compatible with standard fabrication processes.
2Reliability
If dielectric material is used to separate conductive elements, then galvanic isolation is achieved, but dielectric breakdown occurs in high-voltage applications
Solution Approach 1:
The patent modifies the geometric parameter of the interconnect (adding a beveled angle) to reduce electric field concentration. This change allows the dielectric material to effectively withstand high voltages without breaking down, thereby maintaining galvanic isolation effectiveness while eliminating the breakdown risk.
3Power
If operating voltage is increased, then power transmission capability improves, but dielectric breakdown risk increases
Solution Approach 1:
The patent changes the interconnect geometry by adding a beveled angle, which reduces electric field concentration. This allows the system to operate at higher voltages (improving power transmission capability) without increasing dielectric breakdown risk, as the modified geometry prevents field concentration that would lead to breakdown.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of beveled interconnects with obtuse angles significantly reduces the electric field at corners, increasing the operating lifetime of microelectronic devices and allowing for higher operating voltages without dielectric breakdown.
Implementation Method 1
reduce the electric field concentration at corners
Data Source
AI summary
A microelectronic device including a beveled interconnect is disclosed. Example microelectronic devices include a dielectric layer having a first surface at a first height over a substrate, a second surface at a second height over the substrate, and a third surface connecting the first surface and the second surface. The first and third surfaces form a beveled corner. A beveled interconnect includes a first interconnect segment over the first surface and a second interconnect segment extending from the first interconnect segment toward the second surface and ending over the third surface.