Surface Mount BGA Socket Using Additive Printing for Fine Pitch Interconnects

The patent transitions from traditional planar socket designs to a three-dimensional stacked architecture where multiple IC devices are connected vertically through through-silicon vias (TSVs). This dimensional change allows increased terminal count without proportionally increasing package footprint, as connections are established in the vertical dimension rather than spreading out horizontally.

The patent implements a nested structure where multiple IC devices are stacked one on top of another, with each device containing embedded contacts that interface with TSVs. The smaller embedded contacts are nested within the larger device structure, allowing multiple functional units to be integrated within a compact package volume.

The patent forms TSVs and embedded contacts during the semiconductor fabrication process itself, before final assembly. This preliminary formation of interconnect structures with precise dimensional control through standard semiconductor manufacturing techniques enables fine pitch implementation without requiring post-fabrication precision alignment operations.

The patent replaces traditional mechanical contact systems with electrical field-based connections through capacitive coupling and inductive coupling mechanisms. This substitution eliminates the need for precise mechanical alignment and physical contact at fine pitches, as the electrical coupling occurs through electromagnetic fields that can bridge small gaps without direct contact.

The patent replaces long vertical contact members with a stacked architecture where connections are made through horizontal TSV interfaces between stacked devices. This dimensional change eliminates the need for long spring contacts, as the vertical stacking provides mechanical support while electrical connections are made through precise TSV alignment and capacitive coupling at each interface.

The patent replaces mechanical spring contact systems with capacitive and inductive coupling mechanisms. The retention and electrical connection functions are achieved through electromagnetic fields rather than long mechanical contacts, eliminating self-heating issues while maintaining connection reliability through field-based coupling.

The patent uses thin film dielectric layers and conformal coating techniques to provide electrical isolation between adjacent TSVs and contacts. These thin film structures maintain adequate electrical insulation while allowing close spacing of interconnect elements, preventing cross-talk through proper dielectric material selection and thickness control during fabrication.

The patent replaces direct mechanical contact between adjacent terminals with capacitive coupling through thin dielectric barriers. This substitution eliminates the need for thick insulating walls between contacts, as the capacitive interface through the thin dielectric provides both electrical isolation and signal transmission functionality.

The patent merges the retention function and electrical connection function into a single integrated TSV structure. The TSV provides both mechanical support for device retention and electrical connection through the same vertical interconnect, eliminating separate retention features that would add parasitic mass and degrade signal integrity at high frequencies.

The patent replaces mechanical retention features with the structural integrity of the stacked device architecture itself. The rigid TSV and embedded contact structures provide inherent mechanical retention without requiring additional retention elements, while the capacitive and inductive coupling mechanisms maintain signal integrity by avoiding parasitic inductance from extra retention components.