Bi-layer Dislocation Formation in Semiconductor Stressor Regions
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Solution Overview
Problem
Existing methods for forming stressor regions in semiconductor devices, such as MOSFETs, are not entirely satisfactory in enhancing carrier mobility and device performance, particularly at smaller technology nodes, due to limitations in stress film deposition and annealing processes.
Innovation Solution
A method involving a series of pre-amorphous implantation and annealing steps to form bi-layer dislocations in stressor regions, using stress films deposited and removed in stages to recrystallize amorphized regions, thereby creating consistent stress within the channel region without additional cost through the use of existing manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing stress film deposition and annealing processes are used, then stressor regions can be formed, but carrier mobility enhancement and device performance are not sufficiently improved
Solution Approach 1:
The stressor region formation is divided into multiple sequential steps: first forming a initial stressor region with first stress film, then forming a second stressor region with second stress film. This segmentation allows each stressor region to be independently optimized and controlled, achieving more consistent stress distribution in the channel region while significantly enhancing carrier mobility and device performance
Solution Approach 2:
The first stressor region is formed in advance before the second stressor region. This preliminary action creates a foundation that guides subsequent processing steps, ensuring that the second stressor region can be precisely positioned and integrated. The sequential formation allows for better control over stress distribution and contributes to improved manufacturing precision and device performance
2Reliability
If advanced stressor region techniques are implemented to improve carrier mobility, then device performance enhances, but manufacturing complexity and cost increase
Solution Approach 1:
The patent utilizes existing manufacturing processes and equipment for stress film deposition and annealing, making the same equipment perform multiple functions. The process leverages standard semiconductor fabrication techniques already present in the manufacturing line, avoiding the need for specialized or additional equipment. This multi-functional approach achieves improved carrier mobility and device performance while maintaining manufacturing simplicity and cost-effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves carrier mobility by consistently forming bi-layer dislocations within the active region, enhancing stress in the channel region without increasing manufacturing costs, thus improving device performance.
Implementation Method 1
performing a first pre-amorphous implantation process on the substrate
Implementation Method 2
performing a first annealing process on the substrate and the first stress film
Data Source
AI summary
A semiconductor device with bi-layer dislocation and method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having a gate stack. The method further includes performing a first pre-amorphous implantation process on the substrate and forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate and performing a second annealing process on the substrate and the second stress film.