Transistor TRIZ Cases

A Fin-FET fabrication method extracts dummy gates to form metal gates within precise trenches.

Polygonal contact electrodes fill through-holes between bridge and sensor portions, reducing contact resistance while maintaining structural integrity.

V-shaped substrate recesses filled with stressed silicon germanium improve energy efficiency while managing manufacturing precision constraints.

Laser annealing a reducing metal layer on an oxide semiconductor creates conductive source and drain contact zones.

Dummy transistors adjust offset voltage via drain capacitance, reducing process variations without increasing circuit area.

Segmented terminal groups average reference voltages across mixed signal line regions, reducing dividing line visibility despite low transistor mobility.

Varying passivation thickness in the peripheral area resolves the trade-off between robustness against external charges and moisture-related corrosion.

A graphene carbon layer resolves lattice mismatch issues by enabling high-quality thin film growth and transfer to flexible substrates.

A stacked layer structure with a planarization stop layer exposes top surfaces in cell array and peripheral circuits regions simultaneously.

Layered silicon oxide and nitride films block material intrusion between adjacent word lines, preventing parasitic capacitance increase and electrical leakage.

Deep trenched floating gates in the termination area block leakage paths, maintaining high breakdown voltage despite shallow prior art structures.

A memory latch circuit uses oxide semiconductor transistors to minimize leakage current paths between power supply and ground potentials.

A stacked oxide semiconductor transistor structure reduces off-state current to enable long-term data retention without refresh operations.

Titanium nitride templates enable selective deposition of ruthenium or copper to resolve conductivity limitations in thin integrated circuitry.

A charging stop circuit disconnects the bootstrap capacitor from the high voltage potential during dead times to prevent wasteful current flow.

A doped field cut region applies tensile stress to boost carrier mobility without increasing parasitic capacitance between adjacent transistors.

Dynamic back-gate control adjusts SRAM transistor threshold voltage, resolving the trade-off between cell stability and area scaling.

Multi-layer insulating pattern with metal-based dielectric supports orthogonal bit lines, reducing necking and bending.

A deformation preventing layer offsets thermal stress on a substrate surface to maintain flatness during high temperature processing.

Sidewall composition controls threshold voltage in high-k gate insulating films, reducing dispersion from impurity fluctuations.

Silicide layers formed via thermal annealing lower contact resistance while a dielectric layer prevents electrical breakdown and leakage current.

Oxide-to-oxide bonding joins single crystal transistor layers while through-silicon vias enable high-density interconnects without damaging lower wiring.

A back-illuminated imaging sensor uses a specific doping profile to reduce dark current noise.

A semiconductor device uses a threshold-modulating film to trap charge and adjust the read transistor voltage.

A semiconductor link region connects intrinsic and extrinsic base layers in a bipolar junction transistor structure.

A dual liner silicide fabrication method for CMOS devices uses protective layers and self-aligned dielectric deposition to form source and drain liners.

Ion-cut layer transfer aligns stacked transistors to resolve TSV density and alignment trade-offs while maintaining reliability.

Segmented pixel groups with dedicated detection signal lines enable simultaneous radiation amount reading.

A vertical CMOS inverter structure positions a high-k dielectric layer directly on a boron-doped silicon germanium source/drain region to enable controlled programming.

Segmented gate structure controls core and edge threshold voltages independently, resolving STI corner parasitic effects that lower device stability.

A semiconductor device design uses vertical and horizontal channel orientations to produce distinct gate lengths for core and input/output transistors.

Alternating silicon oxynitride layers with matched refractive indices enhance light transmittance in thin film transistor substrates.

Vertical transient voltage suppressor uses asymmetric doping regions to achieve symmetric breakdown voltages.

A dual-gate thin-film transistor uses unequal gate capacitance to amplify photoelectric signals within an image sensor array.

Surrounding the fin with a gate electrode utilizes the entire channel surface, increasing operating current and suppressing short channel effects.

A floating electrode electrically connected to the data line decreases resistance without increasing thickness, preventing substrate warping and stains.

Elongated vias connect parallel conductive members in semiconductor capacitor plates, resolving lithography alignment issues and leakage currents.

A semiconductor stressor region forms bi-layer dislocations through sequential pre-amorphous implantation and annealing to enhance carrier mobility.

Nanosheet stacks with distinct doping profiles create gate-all-around transistors on a single substrate.

A power device integrates a Schottky diode with the drift region to enable faster switching speeds.

A 10T dual-port SRAM cell design segments metal routing across multiple layers to simplify interconnects.

Series diodes adjust trigger voltage in electrostatic protection circuits, resolving leakage current trade-offs during normal operation.

Offset conductive meshes form contacts at intersections to resolve lithography limits on packing density while maintaining electrical connection efficiency.

Alternating n-type and p-type strips in transistor extension regions create lateral electric fields that enhance depletion.

A display device integrates a light-shielding conductive layer directly with the first electrode to block stray light.

Conformal cap layer protects gate stack side surfaces, reducing channel length variation and dielectric damage in flash memory cells.

Connecting a dummy floating gate electrode to a word line equalizes potentials, preventing non-uniform movable ion distribution in interlayer insulating films.

White emission layer paired with capping layers of varying refractive indices and thicknesses to optimize light extraction across subpixels.

Segmenting the gate electrode into metal and polysilicon regions suppresses gate-induced drain leakage while maintaining low total gate resistance.

Epitaxial silicon germanium carbon growth adjacent gate electrodes replaces removed silicon germanium layers in dual EPI CMOS integration.

Stitched dies use embedded multi-die interconnect bridges to couple separated logic and transistor layers.

Metal oxide layer formation over gate insulating layers enables precise dopant supply to semiconductor regions.

A vertical thin film transistor uses an oxide semiconductor channel to boost electrical current.

A flash memory device forms a Schottky contact at the channel layer to reduce leakage current.

Segmenting the semiconductor layer into distinct carrier concentration zones reduces contact resistance while maintaining threshold voltage distribution.

A non-volatile memory cell structure separates read program and erase devices into distinct active regions to isolate operational cycles.

A thin film transistor uses transparent electrodes as conductive spacers between copper contacts and the semiconductor layer.

A common-mode choke level-shifts drive pulses to high-side switches, eliminating recovery time and flyback voltages from transformer reset.

Ion implantation and silicidation create fully alloyed source drain regions to prevent electrical shorts between adjacent transistors.

Integrating sensor thin film transistors into pixels eliminates separate modules, reducing device complexity and manufacturing costs.

Laser annealing crystallizes semiconductor layers without exceeding thermal budgets, preserving metal interconnects.

Sidewall spacers define sub-lithographic fin thickness, eliminating additional masks to reduce overlay errors and manufacturing costs.

A staircase fin structure couples substrate strain into narrow top portions using a pre-amorphization implant to enhance drive current.

Canted fins in this finFET design produce shear and normal strain, improving carrier mobility without complex epitaxial processes.

Redistribution layers and planarization improve heat dissipation efficiency by reducing die size and ensuring uniform copper pillar height.

Segmenting the gate dielectric with a low-k layer near the drain mitigates electric field intensity, reducing leakage current and parasitic capacitance.

Parallel poly-silicon layers distribute current uniformly to suppress localized heat generation and resistance fluctuations in semiconductor devices.

An inverted process sequence forms vertical gates before active pillars, preventing void formation and ensuring stable word line integrity.

A single liner layer in a FinFET gate contact structure acts as both work function metal and diffusion barrier.

A FinFET decoupling capacitor uses a vertical gate stack to store charge between the fin and channel region.

A semiconductor device merges high-side source and low-side drain electrodes into a single shared structure to minimize parasitic inductance.

Self-aligned silicide deposition on active line sidewalls increases drain contact area without additional etching steps.

A depletion mode GaN HEMT cascoded with a high-speed FET and Schottky diode creates an enhancement mode switch.

Heavily doped silicon digit lines with air gaps lower coupling capacitance in DRAM access devices.

A split-gate non-volatile memory cell incorporates a tensile stressor layer to modify the channel region and charge storage interface.

Segmented resistance prevents parasitic PNP forward-biasing and latch-up, maintaining ESD immunity without compromising circuit reliability.

Group and pattern spacers with distinct inflection points reduce step differences between interlayer insulating layers in semiconductor devices.

Fused polycyclic aromatic compounds block charge leakage while maintaining thermal stability and visible light transparency.

A silicon glass charge stabilization layer neutralizes surface charge at the dielectric interface of high voltage semiconductor devices.

Replacing fluorine-containing materials with a tungsten silicide layer eliminates diffusion-induced voids and improves device reliability.

Auxiliary PMOS transistors buffer drain voltage in band-gap reference circuits to minimize substrate leakage current.

A thin-film transistor incorporates an aluminum lower oxide protective film to absorb visible light and stabilize electrical properties.

Conductive plugs interconnect every other bit line into pairs, simplifying multiplexer routing and easing manufacturing difficulty as feature sizes decrease.

A semiconductor device uses first and second pillars with different widths to produce transistors with varying threshold properties.

A semiconductor memory design uses stacked gate structures with oxide semiconductor layers to enable efficient charge storage and control.

Buffer region lifetime killers shorten carrier lifetime to suppress tail current and reverse recovery loss.

A protecting circuit activates before the protected component to clamp overvoltage spikes during power transitions.

A semiconductor device uses stacked layers of identical transistor types with overlapping gate regions and laterally offset source and drain electrodes.

A high electron mobility transistor uses a recessed silicon doped layer to form a metal-insulator-semiconductor structure that enhances electron mobility.

Rounded-corner recessed regions in split gate devices increase drive current and breakdown voltage, resolving isolation versus performance trade-offs.

A silicon-controlled rectifier separates trigger and discharge current paths using perpendicular FinFET alignment.

Dielectric platforms with air gaps isolate higher and lower voltage transistors, reducing parasitic capacitance to increase frequency of operation.

Composite dielectric structures stabilize germanium oxides to reduce defect density and improve device reliability.

An embedded region in the semiconductor layer prevents electric field concentration at the groove end, improving breakdown voltage and reducing ON resistance.

A second oxide transistor connected in series with the first increases off-state resistance to block electron flow.

Shielding patterns under oxide transistors block light to prevent leakage currents that degrade electrical stability during low-temperature manufacturing.

Segmented gate stacks with variable titanium nitride thicknesses control threshold voltages across different transistor types.

Dielectric trench isolation material with projections reduces parasitic coupling in recessed access gate lines.