HEMT Recessed Silicon Doped Layer for Electron Mobility
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Solution Overview
Problem
Conventional high electron mobility transistors (HEMTs) face challenges in achieving high frequency and high power applications due to limitations in electron mobility and breakdown voltage, particularly with silicon-based semiconductors, which lead to high source resistance and inefficient power electronic devices.
Innovation Solution
The development of HEMTs with a silicon doped layer in a recessed region of first and second semiconductor layers, including a p-type doped region and a 2-dimensional electron gas (2DEG) region, which forms a metal-insulator-semiconductor (MIS) structure to enhance electron mobility and control threshold voltage, using materials like gallium nitride (GaN) and aluminum nitride (AlN) for improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based semiconductors are used in HEMT, then manufacturing is easier and cost is lower, but electron mobility is low and source resistance is high
Solution Approach 1:
The patent employs a composite material structure combining silicon-based semiconductor layers with a semiconductor doped layer containing p-type and n-type doped regions. This composite approach allows the device to leverage the manufacturing advantages of silicon while introducing doped regions that enhance electron mobility and reduce source resistance, thereby resolving the contradiction between ease of manufacture and electron mobility performance.
Solution Approach 2:
The patent introduces localized doped regions (p-type and n-type) within specific areas of the semiconductor structure rather than uniformly doping the entire device. This local quality modification allows electron mobility to be enhanced in critical regions where it is most needed, while maintaining the overall silicon-based architecture that provides manufacturing advantages.
2Device complexity
If conventional HEMT structure is used, then device simplicity is maintained, but breakdown voltage is limited and performance in high frequency applications is insufficient
Solution Approach 1:
The patent segments the semiconductor structure into distinct functional layers including a semiconductor doped layer with separately defined p-type doped regions and n-type doped regions. This segmentation allows each region to be optimized for specific functions: the p-type regions contribute to breakdown voltage enhancement while the n-type regions enhance electron mobility, thereby improving overall device performance without excessive complexity.
Solution Approach 2:
The patent introduces a vertical dimension to the device structure by forming a recessed region and placing the semiconductor doped layer with alternating p-type and n-type regions within this recess. This three-dimensional structural arrangement enables enhanced breakdown voltage and electron mobility performance by creating specific electric field distributions and carrier transport paths that are not achievable in conventional planar structures.
3Reliability
If silicon doped layer with p-type and n-type regions is added, then electron mobility increases and threshold voltage control improves, but device complexity increases
Solution Approach 1:
The patent merges the functions of threshold voltage control and electron mobility enhancement into a single integrated semiconductor doped layer that contains both p-type and n-type doped regions. This unified structure eliminates the need for separate components or layers for each function, thereby achieving improved electron mobility and threshold voltage control while minimizing the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases electron mobility, reduces on-resistance, and allows for precise control of threshold voltage, enabling HEMTs to operate effectively in high frequency and high power applications with improved efficiency.
Implementation Method 1
By forming a heterojunction with different band gap materials, a 2-dimensional electron gas (2DEG) layer is induced in a semiconductor material layer having a small band gap to improve the movement speed of electrons
Implementation Method 2
The gate, the gate insulating layer, and the p-type doped region may define a metal-insulator-semiconductor (MIS) structure
Implementation Method 3
This configuration increases electron mobility, reduces on-resistance, and allows for precise control of threshold voltage
Data Source
AI summary
According to example embodiments, a high electron mobility transistor (HEMT) includes a first semiconductor layer on a substrate and a second semiconductor layer on the first semiconductor layer. The first and second semiconductor layers define a recessed region. A semiconductor doped layer is in the recessed region of first and second semiconductor layers. A 2-dimensional electron gas (2DEG) region is at a portion of the first semiconductor layer adjacent to both sides of the semiconductor doped layer.