V-Shaped Recess Semiconductor Device for Energy Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The demand for thinner, lighter, and smaller electronic devices has led to a need for smaller and faster semiconductor circuits that consume less power, which existing CMOS circuit designs struggle to meet due to limitations in real estate and energy efficiency.
Innovation Solution
The development of semiconductor devices with v-shaped recesses etched into the substrate, filled with stressed monocrystalline semiconductor material like silicon germanium, which are epitaxially grown in-situ to enhance the height-to-length ratio and improve energy efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional CMOS circuit designs are used, then manufacturing simplicity is maintained, but energy efficiency and power consumption are insufficient
Solution Approach 1:
The patent applies local quality by creating V-shaped recesses at specific locations within the semiconductor device structure. These recesses are formed in the substrate beneath the gate electrode and are filled with stressed semiconductor material. This localized structural modification improves carrier mobility and energy efficiency in critical regions without requiring complete redesign of the entire device, thus balancing energy efficiency improvement with manageable device complexity.
Solution Approach 2:
The patent utilizes parameter changes by introducing stress into the semiconductor material through the V-shaped recess geometry. The stressed semiconductor material alters physical parameters such as carrier mobility and electrical conductivity. By controlling the depth, shape, and material composition of the recesses, the patent optimizes electrical parameters to achieve improved energy efficiency while maintaining manufacturability.
2Area of moving object
If device size is reduced to meet demand for smaller electronic devices, then real estate utilization improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies preliminary action by forming the V-shaped recesses in the substrate before depositing the semiconductor material and forming the gate electrode. This sequence allows the recess geometry to be established early in the fabrication process, providing a predefined template that guides subsequent material deposition. The preliminary formation of recesses with controlled dimensions helps maintain manufacturing precision even as device sizes are reduced.
Solution Approach 2:
The patent employs the nested doll principle by placing the V-shaped recesses within the substrate structure, then nesting the semiconductor material within the recesses, and finally nesting the gate electrode above the filled recesses. This hierarchical nesting approach allows precise control at each level of the structure, enabling miniaturization while maintaining manufacturing precision through cumulative dimensional control.
3Shape
If V-shaped recesses are etched ex-situ, then manufacturing process flexibility is maintained, but height-to-length ratio is reduced
Solution Approach 1:
The patent applies merging by combining the etching process with the in-situ environment where subsequent deposition and fabrication steps occur. By forming V-shaped recesses in-situ, the patent merges multiple process considerations (etching, deposition, stress control) into a single integrated fabrication sequence. This integration enables the formation of recesses with optimized height-to-length ratios that would be difficult to achieve with ex-situ etching, while maintaining ease of manufacture through process consolidation.
Solution Approach 2:
The patent substitutes mechanical ex-situ etching processes with in-situ etching performed within the same vacuum chamber or processing environment used for subsequent material deposition. This replacement eliminates the need for separate mechanical handling and transfer steps, allows for direct in-situ formation of recesses with precise dimensional control, and enables better integration with the overall fabrication process while achieving superior height-to-length ratios.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of semiconductor devices with improved energy efficiency and reduced power consumption, enabling the production of smaller and faster semiconductor circuits that meet the demands of modern electronic devices.
Implementation Method 1
the substrate is exposed to an etching gas in-situ to etch the v-shaped recess(es) into the lattice structure of the substrate
Implementation Method 2
the etching gas comprises HCl heated to a temperature of between about 400 degrees Celsius to about 1000 degree Celsius
Implementation Method 3
stressed monocrystalline semiconductor material (e.g., silicon germanium) is epitaxially grown within the v-shaped recess(es)
Data Source
AI summary
Among other things, a semiconductor device or transistor and a method for forming the semiconductor device are provided for herein. The semiconductor device comprises one or more v-shaped recesses in which stressed monocrystalline semiconductor material, such as silicon germanium, is grown, to form at least one of a source or a drain of the semiconductor device. The one or more v-shaped recesses are etched into a substrate in-situ. The semiconductor device comprises at least one of a source or a drain having a height-to-length ratio exceeding at least 1.6 when poly spacing between a first part of the semiconductor device (e.g., first transistor) and a second part of the semiconductor device (e.g., second transistor) is less than about 60 nm.