Buck Regulator HEMT Shared Electrode Reduces Wiring Inductance
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Solution Overview
Problem
The performance of buck regulator converters is degraded due to increased inductance and resistance from the numerous wires required to connect high-side and low-side transistors, which affects the efficiency of the circuit.
Innovation Solution
A semiconductor device design where the high-side source electrode and low-side drain electrode are shared as a single source and drain electrode, reducing the need for connecting wires and eliminating the need for isolation regions between high-side and low-side transistors, thereby minimizing inductance and resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-side and low-side transistors are connected using separate wires and isolation regions, then electrical insulation is ensured, but inductance and resistance increase degrading circuit performance
Solution Approach 1:
The patent merges the high-side source electrode and low-side drain electrode into a single shared electrode structure. This eliminates the need for separate connecting wires and isolation regions between the transistors, thereby reducing inductance and resistance while maintaining proper electrical insulation through the shared electrode design.
Solution Approach 2:
The shared electrode serves multiple functions simultaneously: it acts as the source electrode for the high-side transistor, the drain electrode for the low-side transistor, and provides the necessary electrical insulation between the two transistors. This multi-functional design eliminates the need for separate insulation structures.
2Reliability
If multiple separate wires are used to connect high-side and low-side transistors, then electrical connection is established, but device complexity increases
Solution Approach 1:
The patent combines multiple separate electrical connection elements into a single shared electrode structure. Instead of using separate wires and isolation regions to connect the high-side and low-side transistors, the invention uses one integrated electrode that performs all necessary connection functions, thereby simplifying the device structure.
3Reliability
If separate connecting structures are used between high-side and low-side transistors, then electrical insulation is maintained, but productivity decreases due to increased manufacturing steps
Solution Approach 1:
The patent merges the electrical connection and insulation functions into a single shared electrode structure. This integration reduces the number of manufacturing steps required, as separate processes for creating connecting wires and isolation regions are eliminated, thereby improving manufacturing efficiency and productivity.
Data Source
AI summary
A semiconductor device includes a high-side field-effect transistor including a high-side drain electrode, a high-side gate electrode, and a high-side source electrode; and a first low-side field-effect transistor including a first low-side drain electrode, a first low-side gate electrode and a first low-side source electrode, wherein the high-side source electrode and the first low-side drain electrode are shared as a single source and drain electrode, and the high-side drain electrode, the high-side gate electrode, the source and drain electrode, the first low-side gate electrode and the first low-side source electrode are arranged in this order while being interposed by gaps, respectively.