Conductive Gating Structures Using Titanium Nitride Templates
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Solution Overview
Problem
Current methods for forming integrated transistors and memory architectures face challenges in achieving high conductivity and patterning efficiency, particularly with thin conductive materials like titanium nitride, which is insufficient for advanced integrated circuitry.
Innovation Solution
The use of titanium nitride as a template for selectively depositing more conductive metal-containing materials, such as ruthenium, molybdenum, and copper, to form conductive gating structures in transistors, allowing for higher conductivity even at thin thicknesses and improved patterning efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thin conductive materials like titanium nitride are used for patterning, then patterning efficiency and precision are improved, but conductivity is insufficient for advanced integrated circuitry
Solution Approach 1:
The patent uses titanium nitride as a template material (intermediary) that is removed after facilitating the deposition of highly conductive metal-containing materials. The template enables precise patterning during deposition but is discarded afterward, resolving the contradiction between needing precise patterning and achieving high conductivity in the final structure
Solution Approach 2:
The patent performs preliminary patterning using titanium nitride before the actual conductive material deposition. The template structures are formed first to guide subsequent material placement, ensuring high precision patterning is achieved before the final conductive structures are created
2Ease of manufacture
If conventional non-ferroelectric capacitors are used in DRAM, then manufacturing simplicity is maintained, but memory performance and stability are limited
Solution Approach 1:
The patent employs ferroelectric material as a composite insulative layer within the capacitor structure, combining it with conductive electrodes to create a capacitor that maintains manufacturing compatibility while significantly improving memory stability through the ferroelectric properties of the insulative material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of highly conductive gating structures that are suitable for advanced integrated memory applications, offering improved conductivity and reduced oxidation resistance, while simplifying the patterning process and reducing costs.
Implementation Method 1
Conductive material is selectively formed on the template material relative to any other exposed materials of the construction. The conductive material is more conductive than the template material.
Data Source
AI summary
Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.