Canted Fin Semiconductor Device Shear Strain Generation
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Solution Overview
Problem
Current FINFET devices primarily generate normal strain, which limits carrier mobility, and there is a need for enhanced performance in next-generation semiconductor devices with smaller dimensions.
Innovation Solution
The semiconductor device design incorporates fins canted at specific angles to generate both shear and normal strain in the channel region, utilizing source and drain regions with diamond or Y-shapes, and a dielectric layer to enhance carrier mobility, eliminating the need for complex epitaxial processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional FINFET devices are used with standard source and drain regions, then the device structure is simple to manufacture, but carrier mobility is limited due to generation of only normal strain
Solution Approach 1:
The source and drain regions are designed with asymmetric geometries (diamond shape or Y-shape) rather than conventional symmetric rectangular shapes. This asymmetry enables the generation of both normal strain and shear strain in the channel region, thereby improving carrier mobility without requiring complex epitaxial processes
Solution Approach 2:
The invention changes the geometric parameters of the source and drain regions by canting the fins at specific angles (22.5-67.5 degrees, preferably 40-50 degrees) with respect to the source and drain regions. This parameter change transforms the strain generation mechanism to produce both normal and shear strain components, enhancing carrier mobility
2Reliability
If fins are canted at specific angles to generate shear strain, then carrier mobility is improved, but manufacturing precision requirements increase
Solution Approach 1:
The fin canting angle is predetermined and designed into the manufacturing process at the planning stage. By establishing the specific angle range (22.5-67.5 degrees, preferably 40-50 degrees) in advance, the manufacturing process can be optimized around this fixed parameter, reducing the actual precision burden during fabrication
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively improves carrier mobility by introducing shear strain, particularly beneficial for thin film transistors and FINFETs, offering improved performance without requiring intricate epitaxial processes.
Implementation Method 1
source and drain regions adjacent the channel region to generate shear and normal strain on the channel region
Implementation Method 2
source and drain regions adjacent the channel region to generate shear and normal strain on the channel region
Data Source
AI summary
A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.