Semiconductor Device Metal Oxide Layer Oxygen Vacancy Reduction
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Solution Overview
Problem
Current semiconductor devices using metal oxide layers face challenges in achieving stable and reliable electrical characteristics due to issues with oxygen vacancies and hydrogen diffusion, which affect the performance and reliability of transistors.
Innovation Solution
A method of manufacturing semiconductor devices involves forming a metal oxide layer over a gate insulating layer, processing it into an island shape, and supplying elements like phosphorus or boron through the gate insulating layer to reduce oxygen vacancies and inhibit hydrogen diffusion, thereby improving the electrical characteristics and reliability of the devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a metal oxide layer is used in a transistor, then field-effect mobility is improved, but oxygen vacancies and hydrogen diffusion cause unstable electrical characteristics
Solution Approach 1:
The patent applies preliminary action by forming the metal oxide layer before transistor operation, where it continuously supplies oxygen to fill oxygen vacancies in the semiconductor layer and blocks hydrogen diffusion. This pre-established protective structure prevents electrical characteristic degradation before it occurs, ensuring stable threshold voltages and reliable device performance throughout operation.
2Reliability
If a metal oxide layer is formed over the gate insulating layer, then oxygen vacancies are reduced and electrical characteristics are improved, but device structure and manufacturing process become more complex
Solution Approach 1:
The metal oxide layer serves multiple functions simultaneously: it acts as a barrier to hydrogen diffusion, a source of oxygen to fill vacancies, and part of the gate stack structure. This multi-functionality reduces the need for additional separate layers or structures, making the added complexity worthwhile given the significant improvements in device reliability and electrical characteristic stability.
3Reliability
If elements are supplied through the gate insulating layer to the semiconductor layer, then oxygen vacancies are reduced and transistor performance is improved, but manufacturing process complexity increases
Solution Approach 1:
The gate insulating layer serves as an intermediary structure that enables controlled element supply to the semiconductor layer. By incorporating this layer into the gate stack, the patent achieves precise dopant delivery to fill oxygen vacancies and improve transistor performance, while the layer's integration into the existing gate structure minimizes additional manufacturing complexity compared to separate processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in semiconductor devices with improved electrical characteristics and high reliability by reducing oxygen vacancies and hydrogen diffusion, leading to lower off-state currents and increased transistor performance.
Implementation Method 1
supplying a first element through the gate insulating layer to a region in the semiconductor layer, which does not overlap with the gate electrode
Implementation Method 2
the metal oxide layer is processed into an island shape after the first element is supplied to the semiconductor layer
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor layer is formed, a gate insulating layer is formed over the semiconductor layer, a metal oxide layer is formed over the gate insulating layer, and a gate electrode which overlaps with part of the semiconductor layer is formed over the metal oxide layer. Then, a first element is supplied through the metal oxide layer and the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The metal oxide layer may be processed after the first element is supplied to the semiconductor layer.