Bias Current Generator With Emulated Resistor for Nano-Amp Stability

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Solution Overview

Problem

There is a need for ultra low power current generators for Internet-of-Things (IoT) devices to prolong battery life in remote environments, as existing solutions fail to provide stable and temperature-independent bias current in the nano-ampere range.

Innovation Solution

The development of integrated circuitry using bias current generating schemes that include a reference voltage generator and an emulated resistor structure, which self-stabilizes and reduces temperature dependency, enabling efficient nano-ampere bias current generation for IoT applications.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If existing bias current generation schemes are used, then current generation is achieved, but temperature stability is poor and temperature dependency is high

Engineering Contradiction:
Improvebias current stabilityVSAvoidtemperature dependency
Core Design Contradiction:
Stability of the object's compositionVSTemperature

Solution Approach 1:

The patent employs multiple stacking transistor structures with different threshold voltages and an emulated resistor structure to dynamically adjust and compensate for temperature variations. By changing the operating parameters of these structures, the bias current remains stable across different temperature conditions, resolving the contradiction between current generation and temperature stability.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If conventional current generators are used, then operation is achieved, but power consumption is too high for ultra low power IoT applications

Engineering Contradiction:
Improveoperation capabilityVSAvoidpower consumption
Core Design Contradiction:
ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent uses native device structures with specific threshold voltages and emulated resistor structures that are optimized for ultra low power operation. By locally tailoring the electrical characteristics of each component, the system achieves operational capability while minimizing power consumption to enable ultra low power IoT applications.

Inventive Principle:
Principle #3Local quality

3Productivity

If standard bias current generators are used, then current generation is achieved, but area efficiency is poor

Engineering Contradiction:
Improvecurrent generation capabilityVSAvoidcircuit area
Core Design Contradiction:
ProductivityVSArea of moving object

Solution Approach 1:

The patent integrates multiple functions into unified structures: the stacking transistor structures serve both as current generation elements and temperature compensation mechanisms, while the emulated resistor structure provides both biasing and stabilization functions. This merging of functions reduces the overall circuit area while maintaining current generation capability.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11698653B2System, device and method for generating a biasing current
Publication Date: 2023.07.11 ARM LTD
  • US11698653B2 patent drawing
  • US11698653B2 patent drawing
  • US11698653B2 patent drawing

AI summary

Various implementations described herein are directed to multi-stage system. The system may include a first stage having a current bias generator that generates a biasing current. The system may include a second stage that is coupled to the first stage, and the second stage may include a load that utilizes the biasing current generated by the current bias generator.