Biased Chuck PVD for Void-Free Aluminum Copper Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the back-end of line (BEOL) process for integrated circuit fabrication, physical vapor deposition (PVD) chambers fail to bias power to the chuck heating semiconductor devices, leading to voids or pinholes in the aluminum copper layer, which prevents complete coverage by the second insulation layer and damages the layer when contacted by a bumping chemical layer.
Innovation Solution
A PVD chamber with a biased power supply for the chuck component, combined with a magnetron generating a magnetic field, ensures the aluminum copper layer is deposited without voids, allowing the second insulation layer to fully cover it and preventing damage from the bumping chemical layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the PVD chamber does not bias power to the chuck heating the semiconductor device, then the device structure is simpler and energy consumption is lower, but voids or pinholes are formed in the aluminum copper layer
Solution Approach 1:
The chuck is heated to a specific temperature range (200°C to 400°C) before the aluminum copper layer deposition begins. This preliminary heating action prepares the substrate to ensure proper adhesion and prevent void formation during subsequent deposition, resolving the quality issue without requiring complex in-process adjustments
Solution Approach 2:
The patent applies bias power to the chuck to maintain it at an optimized temperature range (200°C to 400°C) during deposition. This parameter change in temperature control prevents void and pinhole formation in the aluminum copper layer, improving reliability while adding only a bias power supply component
2Reliability
If the aluminum copper layer contains voids or pinholes, then the deposition process is simpler, but the second insulation layer cannot completely cover the aluminum copper layer and damage occurs when contacted by bumping chemical layer
Solution Approach 1:
By optimizing the chuck temperature through bias power application to within 200°C to 400°C, the deposition process produces a dense, void-free aluminum copper layer. This parameter optimization ensures complete coverage by the second insulation layer and prevents chemical damage, resolving the harmful effects without complicating the deposition process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution prevents voids in the aluminum copper layer, ensuring complete coverage by the second insulation layer and preventing damage from the bumping chemical layer, thereby enhancing the performance and reliability of the semiconductor device.
Implementation Method 1
physical vapor deposition (PVD) chambers
Implementation Method 2
a magnetron generating a magnetic field
Implementation Method 3
a biased power supply to provide a biased power to the chuck component
Data Source
AI summary
An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.