Electric Discharge Tubes TRIZ Cases

A guide groove and connecting member let the shower plate hang in place during maintenance, avoiding screws and extra seals.

Staged hydrogen flow in CHF3-oxygen plasma shapes silicon oxide etching in high-aspect-ratio recesses to prevent voids and over-etching.

A PCB inductive-capacitive sensor tracks plasma current and tunes RF frequency to reduce station variation in semiconductor processing.

A PECVD controller tracks showerhead temperature and adjusts deposition time to keep film thickness uniform without active thermal control.

Curved oval chamber walls spread precursor gas more evenly across round substrates, cutting bypass, overdose, and purge time.

Separating the ring member from the stage concentrates plasma at the edge to remove deposits faster while limiting stage damage.

A monolithic dielectric chamber lid with ceramic-matrix coating reduces thermal mismatch, protects seals, and improves etch gas distribution.

Alternating low- and high-frequency bias with TCP pulsing balances dense and isolation feature etch rates for more uniform depths.

Repeated phase and frequency-shift search cuts reflected wave power and suppresses intermodulation in dual-frequency plasma power supplies.

Inclined radial openings and a central through-hole disperse process gas evenly to the showerhead, preventing dead zones in substrate processing.

Temperature change rates before and after energy shifts reveal electrostatic chuck surface anomalies without adding sensors.

Chamber pressure is tuned to evaporate excess flowable oligomer from top and sidewalls, leaving a cured insulating film in recesses.

Scintillators, a mirror aperture layout, and a Wien filter array improve signal electron collection from closely spaced multi-beam inspection.

Radial fastening modules tighten upper electrode cam nuts simultaneously to equalize contact area, prevent temperature defects, and cut installation time.

Sensor-guided light monitoring adjusts chamber gas flow by zone to improve cleaning uniformity and avoid component damage or particle flaking.

Preplaced Basic FIB elements and routing circuitry raise internal net observability and simplify IC debug in advanced process layouts.

A sealed TEM transfer housing and dual pumping paths prevent ice formation, preserve vacuum integrity, and reduce drift during cryotransfer.

Intersecting circular grooves and radial channels improve sputtering target cooling uniformity, reducing thermal stress, microcracks, and contamination.

Pixel-level dose adjustment shifts lithography pattern edges by a target bias, improving uniformity and dose margin for small features.

A smaller dummy substrate directs cleaning gas to wafer support edge zones, removing by-products that cause sticking and chamber contamination.

Cyclic silicon nitride deposition with hydrogen plasma controls sacrificial feature etch profiles for more uniform, smaller pattern transfer.

A calibrated grating-over-grating target separates backscattered electron effects to measure layer overlay faster and more accurately.

A two-part deposition ring clamps the substrate rim to flatten bowed thin wafers, improving uniformity without carrier bonding steps.

A two-step chamber pre-coat forms a base film before plasma protection, suppressing sputtering particles and protecting inner surfaces.

Low-pressure helium or helium-hydrogen microwave plasma reforms silicon oxide films in high aspect ratio recesses without high heat or oxidation.

A rotating liquid cell extends tilt beyond 120° while holding sample position, improving 3D electron tomography in liquid media.

A tubular inner shield with an oversized top plate improves contaminant removal conductance while limiting chamber deposition and plasma leaks.

Pattern-density-based region splitting adjusts irradiation count and scan speed to cut wasteful stage motion and shorten electron beam drawing time.

A two-step plasma and hydrogen fluoride etch smooths alternating silicon film recesses, improving uniformity and suppressing roughness.

A flexible airtight bellow decouples the metrology frame from chamber vibration while preserving vacuum, cutting platform complexity and cost.

By sensing signal power, phase, and frequency, the controller cancels harmful chamber harmonics to improve plasma uniformity in substrate processing.

An insulating Al2O3-SiC layer at the electrode edge reduces void discharge, helping ceramic electrostatic chucks withstand high voltage.

Simultaneous heating and coolant flow regulate substrate temperature gradients during plasma processing, improving deposition uniformity and throughput.

UV exposure and furnace heating restore optical uniformity and reduce pit debris in ceramic chamber parts exposed to plasma.

Low-energy hydrogen, helium, or neon plasma cleans graphene and makes its surface hydrophilic for biological molecule deposition without lattice damage.

A retractable target holder and porous vapor feed let one aluminum ion source switch between single and multicharged ion generation.

Sequential nitrogen and noble gas plasma enables bottom-up oxide deposition in narrow gaps, avoiding voids, leakage, and fin oxidation.

Electromagnetic plasma pretreatment makes catheter surfaces temporarily hydrophilic to delay bacterial colonization without damaging the material.

A sealed transfer device swaps focus rings and cleans the mount table inside the chamber, cutting replacement time and contamination risk.

Beam energy is retuned by changing voltage amplitude while keeping phase fixed across LINAC stages, cutting setup time for ion implantation.

A stepped multi-ring focus ring limits fluorine etch damage propagation, extending lifetime and etching resistance in plasma substrate processing.

Biasing the PVD chuck at 200°C to 400°C helps deposit a void-free aluminum copper layer, improving insulation coverage and chemical resistance.

By combining Si3N4 with SiC, MgO, and TiCN, this target lowers resistance enough for DC magnetron sputtering while retaining stable thin-film properties.

Simultaneous dark field and NBD capture in STEM improves crystal orientation accuracy while reducing sample damage from beam exposure.

A matrix heater array with optoelectrical isolation enables precise multi-zone wafer heating using one RF filter, reducing wiring complexity and loss.

Automatic switching between same-material sputtering targets keeps film deposition running in vacuum, cutting downtime and extending maintenance cycles.

Moving blocks and a robot arm replace the focus ring without opening the plasma chamber, preserving vacuum and uptime.

Hydrogen and hydrocarbon plasma builds a carbon polymer that protects sidewalls, selectively etching tin oxide while preserving spacers.

Combining photomultiplier timing with CCD spatial data improves signal assignment in multi-beam microscopy, reducing crosstalk artifacts.

A movable ring body tilts and shifts exhaust flow to balance chamber pressure and improve etch-rate uniformity across the substrate.

A variable beam retraction direction avoids crossing the scan region during blanking, reducing charging damage and preserving measurement accuracy.

A same-height bias and attraction electrode layout raises capacitance for stronger plasma generation while maintaining wafer and focus ring holding.

Radiative heating and directed etch gases remove EUV photoresist from wafer backsides and bevel edges while protecting the frontside.

Central power feeding and heater sub-zones improve wafer temperature uniformity while maintaining fast heating in semiconductor processing.

Residual precursor gas is exhausted from plasma supply lines between etch steps to prevent adhesion, condensation, and wafer contamination.

A retractable cover, wiper mechanism, and radial seal keep dust and moisture out while maintaining reliable electrical contact.

Time-delayed pulse distribution lets one high-frequency source run multiple plasma coating stations with lower cost, lower energy use, and stable coating quality.

Magnetic and electrostatic forces separate target atoms from contamination particles in MRAM sputter deposition, improving film quality.

A capacitor-based pulsed bias boosts electrode voltage while reducing plasma electron loss, improving etch stability and consistency.

A dual-layer ceramic coating uses ion-assisted deposition to resist plasma erosion and cracking on susceptor surfaces up to 650°C.

Pulsed-voltage biasing with RF filtering keeps sheath voltage nearly constant, improving IEDF and etch profile control while reducing arcing.

Cold atmospheric plasma dissolved in liquid enables deeper, non-invasive cancer treatment beyond the 3-5 cell layers reached by direct CAP jets.

A dual-flow remote plasma chamber clean targets top and sidewall paths, then uses ammonia recovery to cut downtime and limit part damage.

Independent wall heating, plasma, and bias control keeps temperature stable while forming uniform nitrided and thicker oxide layers in one process.

Adaptive drift correction compares reference and criterion images to adjust probe position and correction frequency for accurate high-magnification scanning.

Speed-controlled wafer rotation in twin-chamber PECVD evens RF overlap exposure, reducing edge-to-center film thickness variation.

Variable-frequency near-field microwave heating averages shifting field patterns to heat thin materials uniformly without large cavities or standing waves.

Plasma-tuned crinkled graphene increases active bonding area in polymers, improving strength and toughness while keeping resin viscosity low.

Sliding control sheets vary showerhead openings to balance wafer pre-clean gas flow, improving uniformity without showerhead replacement.

Remote fluorine-hydrogen plasma selectively removes tantalum or titanium while protecting silicon and metal features in narrow trenches.

A pixelized electron detector captures spatial signal patterns to reveal topography and small buried defects without slowing IC inspection.

A heated showerhead with patterned faceplate holes filters ions from remote plasma flow to improve etch uniformity and reduce material variation.

Pulse-timed beam scanning matches pixel dwell time to the pulse cycle, controlling dose without lens or aperture changes and avoiding image fringes.

Light microscopy guides FIB positioning and monitoring to micromachine beam-sensitive samples while avoiding electron-beam damage and artifacts.

In-situ alignment marks and a nano-contact sensor enable closed-loop correction of wafer motion and electron beam drift during field stitching.

Temperature-based flow tracking estimates precursor fill and remaining time more accurately, helping particle beam tools avoid reservoir depletion interruptions.

A surface replica enables parallel microscopy and correct-scale image overlay, avoiding specimen transfer damage and performance tradeoffs.

A fluid-tunable thermal break between the heater and cooling channel improves wafer support temperature control across cryogenic and high-temperature processing.

A flexible spring snap latch lets a tritium light insert safely into a rigid plastic housing without sacrificing rugged protection.

A low-GWP fluorine gas with carbonyl and ether bonds enables selective silicon nitride plasma etching without CF4 or SF6.

A double-walled, biased gas line carries remotely generated excited species with less recombination, reducing substrate damage in semiconductor processing.

A dielectric-barrier coaxial plasma layout separates plasma generation from coating to deposit uniform films on heat-sensitive wired substrates.

Timed multi-level RF pulses from three generators improve ion energy and incidence-angle control for accurate deep-hole plasma etching.

Single-crystalline Hg3Q2I2 grown by chemical vapor transport improves room-temperature X- and gamma-ray detection with better crystal quality and stability.

An upwardly tapered PEZ ring shifts plasma exposure at the wafer edge to control bevel etch distance and reduce transport contamination.

Strategic power-feed placement across main and sub-heater zones improves in-plane temperature uniformity without sacrificing heating speed.

Targeted sensor capture by location and time window cuts plasma-tool data load while preserving precise process control and chamber matching.

Segmented parametric curves are converted into area-equivalent polygons to speed accurate pixel coverage calculation in charged particle beam writing.

O2 forms a SiO-like hardmask covering, and N2 sputters it onto ruthenium sidewalls to improve profile control at tight pitch.

Film-thickness feedback compensates tilted plasma etch non-uniformity, reducing overlay offset during IC lithography and patterning.

Multiple encoder heads compare grating measurements in real time to calibrate grid errors and keep wafer stage overlay positioning precise.

Multiple temperature sensors and stress estimation let plasma chambers adjust coil power and coolant flow to prevent dielectric window damage.

Captured backside helium is compressed and fed back to the electrostatic chuck, cutting gas waste while maintaining wafer heat transfer.

Partial trench protection and side filling let FIB thinning expose vias without ion beam scratches, improving TEM imaging quality.

Selective switching of coupled low-power generators creates sharp high-voltage pulses while balancing charge and limiting overshoot in plasma loads.

Image-based control guides the needle and stage to automate FIB sample transfer with precise placement on miniaturized holders.

Multiple low-power generators are coupled and rapidly switched to create sharp high-power pulses for capacitive plasma loads with lower losses.

Purge gas fed to both channel ends forms a homogeneous curtain across the wafer path, improving particle removal and easing tunnel cleaning.

Entry and exit wafer offset measurements reveal pedestal thermal shift, enabling rotation-axis correction for accurate module placement.

Applying positive voltage to a conductive member near the chamber wall tunes ion density at the substrate edge for more uniform etching.