Chamber Pre-Coating Sequence to Suppress Sputtering Particles
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Solution Overview
Problem
In substrate processing, the peeling of metal compounds from the chamber's inner wall during semiconductor device manufacturing leads to shape abnormalities due to particle contamination, necessitating a method to suppress particle generation during pre-coating.
Innovation Solution
A substrate processing method involving the formation of a pre-coat film on the chamber's in-chamber parts using a first plasma under conditions that suppress sputtering, followed by a second plasma to form a protective film, controlling radio-frequency power, pressure, and potential differences to prevent particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma is used to form a pre-coat film on the chamber's inner wall, then the protective coating is effective, but sputtering occurs causing particle generation
Solution Approach 1:
The pre-coat film formation is divided into two sequential steps: first forming a base layer without plasma or with suppressed sputtering conditions, then forming a protective film layer with plasma. This segmentation allows each layer to serve its specific function while avoiding the harmful effects of plasma-induced sputtering on the chamber wall.
Solution Approach 2:
A base layer is formed in advance on the chamber's inner wall before the protective film formation step. This preliminary base layer acts as a sacrificial layer that prevents direct plasma contact with the chamber wall, thereby preventing sputtering and particle generation during the subsequent protective film formation.
2Ease of manufacture
If a single plasma step is used for pre-coating, then the process is simple, but particle generation occurs due to sputtering
Solution Approach 1:
The pre-coating process is segmented into two distinct steps with different plasma conditions: Step 1 forms a base layer with suppressed sputtering (lower power, different gas composition), while Step 2 forms the protective film with normal plasma conditions. This segmentation resolves the contradiction by making the process slightly more complex but eliminating particle generation.
3Productivity
If high power plasma is used for rapid film formation, then productivity increases, but sputtering intensity increases causing more particles
Solution Approach 1:
The film formation is divided into two steps with different power levels: Step 1 uses lower power to form a base layer without significant sputtering, while Step 2 uses higher power for rapid protective film formation. The base layer protects the chamber wall during the high-power step, enabling high productivity without increased particle generation.
Solution Approach 2:
A protective base layer is formed in advance before applying high power plasma. This preliminary layer shields the chamber wall from sputtering during the high-power rapid film formation step, allowing productivity improvement without the harmful side effect of increased particle generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses particle generation and ensures the chamber's inner surfaces are protected during substrate processing, preventing shape abnormalities in semiconductor devices.
Implementation Method 1
forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed
Implementation Method 2
forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed
Implementation Method 3
forming a second film on a surface of the first film by using a second plasma
Implementation Method 4
by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part
Data Source
AI summary
A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.