Tilting Ring Pressure Control for Uniform Semiconductor Etching
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Solution Overview
Problem
The challenge in semiconductor substrate processing is the non-uniform etch rate (E/R) across different areas, leading to defects due to variations in process gas distribution and internal pressure control, particularly in the east-west and north-south directions and between the center, middle, and edge areas.
Innovation Solution
An internal pressure control apparatus with a ring body that can be tilted and moved vertically to control the posture and exhaust amount of process gas, ensuring uniform internal pressure and gas distribution across the substrate surface by independently controlling the first and second driving units connected to the ring body through connection members.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the ring body is made movable and controllable in posture, then the uniformity of process gas distribution and internal pressure control is improved, but the device complexity increases
Solution Approach 1:
The ring body is designed as a movable component that can change its posture dynamically. The first and second driving units enable the ring body to tilt and adjust its position, transforming it from a static to a dynamic structure. This allows the exhaust holes to be positioned optimally throughout the processing cycle, improving gas distribution uniformity while managing complexity through controlled movement rather than multiple fixed components.
Solution Approach 2:
The ring body serves multiple functions: it supports the substrate, provides exhaust pathways through its holes, and acts as a pressure control element. By making this single component movable and controllable, it can perform multiple roles in optimizing both gas distribution and pressure control throughout the processing cycle, reducing the need for additional separate components.
2Manufacturing precision
If the ring body posture is controlled to optimize exhaust amount, then the internal pressure uniformity is improved, but the control system complexity increases
Solution Approach 1:
The ring body transitions from a static to a dynamic component with controlled movement capabilities. The first driving unit tilts the ring body while the second driving unit adjusts its position, enabling real-time optimization of exhaust flow and internal pressure distribution throughout the processing cycle.
Solution Approach 2:
The control system is divided into two independent driving units with distinct functions. The first driving unit handles tilting motion for optimizing exhaust direction, while the second driving unit manages positional adjustment. This segmentation allows for modular control and simplifies the overall control architecture.
3Adaptability or versatility
If the first and second driving units independently control the ring body, then the adaptability of pressure control is improved, but the device complexity increases
Solution Approach 1:
The control system is divided into two independent driving units, each responsible for a specific degree of freedom of the ring body. The first driving unit controls tilting motion while the second controls positional adjustment. This segmentation provides adaptability for different processing conditions while maintaining manageable system complexity through functional separation.
Solution Approach 2:
The independent driving units enable the ring body to adapt its posture dynamically throughout the processing cycle. This dynamic control allows optimization of exhaust flow and pressure distribution for different process stages, enhancing versatility without requiring complete system redesign for different conditions.
Data Source
AI summary
The present disclosure relates to an internal pressure control apparatus capable of uniformly processing an upper surface of a semiconductor substrate and a substrate processing apparatus including the same. The substrate processing apparatus comprising a chamber housing including an exhaust hole for exhausting a process gas flowing thereinto, a substrate support unit inside the chamber housing, supporting a semiconductor substrate, a process gas supply unit providing the process gas to the inside of the chamber housing, a plasma generating unit generating plasma inside the chamber housing by using the process gas, and a ring body installed around the substrate support unit and provided as one body, and further comprising an internal pressure control apparatus controlling an internal pressure of the chamber housing, wherein the internal pressure control apparatus controls a posture of the ring body to control an exhaust amount of the process gas flowing into the chamber housing.