Inner Shield Structure for High-Conductance Process Chambers
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Solution Overview
Problem
Existing process kits for substrate processing chambers often fail to provide adequate flow conductance for removing contaminants and etched materials, especially during plasma cleaning or etching processes with increased contaminants, leading to deposition of unwanted materials on chamber surfaces.
Innovation Solution
A process kit design featuring a tubular body with a central opening surrounding a substrate support and a top plate with a gas inlet, where the top plate has a diameter greater than the tubular body, and includes a countersink with a central opening extending through it, providing enhanced flow conductance and minimizing deposition of contaminants on chamber surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a conventional process kit is used to reduce contaminant deposition on chamber surfaces, then deposition is reduced, but flow conductance for removing displaced materials becomes inadequate
Solution Approach 1:
The process kit is segmented into distinct functional zones: an inner shield portion surrounding the substrate support and an outer shield portion extending radially outward. This segmentation allows the inner portion to focus on protecting the substrate area while the outer portion provides extended containment for contaminants, collectively improving both deposition reduction and material removal efficiency without compromising flow conductance
Solution Approach 2:
The process kit extends in the radial dimension beyond the substrate support diameter, creating an outer shield portion that projects outward. This dimensional extension provides additional coverage area for capturing and removing displaced materials, enhancing flow conductance while maintaining effective contaminant deposition prevention on chamber surfaces
2Ease of manufacture
If the process kit structure is simplified to improve manufacturing, then ease of manufacture increases, but ability to provide adequate flow conductance decreases
Solution Approach 1:
The process kit utilizes parameter changes in the shield geometry, specifically varying the radial extent and height profiles of different shield portions. These geometric parameter variations optimize flow conductance characteristics while maintaining a simple两件式 structure that is easy to manufacture, achieving both manufacturing simplicity and adequate material removal capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process kit effectively reduces the deposition of unwanted materials on chamber surfaces while maintaining high conductance, ensuring efficient removal of particles and preventing plasma leaks, thus enhancing the performance and reliability of substrate processing.
Implementation Method 1
a pump coupled to the pump port and configured to remove particles from the interior volume through a gap between the tubular body and the substrate support
Implementation Method 2
Electromagnetic energy (e.g., radio frequency) is applied to an injected gas, such as argon, to excite the injected gas into a plasma state. The plasma releases ions that bombard the surface of the substrate to remove contaminants and/or material from the substrate
Implementation Method 3
the plasma releases ions that bombard the surface of the substrate to remove contaminants and/or material from the substrate
Implementation Method 4
Preclean chambers, typically, use ion bombardment (induced by RF plasma) to remove the native oxide on the metal contact pads and other materials. The preclean process can etch the native oxide and material from the substrate
Data Source
AI summary
Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.