Remote Plasma Gas Line for Low-Loss Excited Species Transport

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Solution Overview

Problem

In semiconductor processing, remote plasma generation is limited by the need to transport excited species, leading to loss and potential damage to substrates, particularly in sensitive applications like gate dielectric formation, where in situ plasma generation can cause material damage and high-temperature annealing increases costs and oxidation risks.

Innovation Solution

A semiconductor processing system and method utilizing a double-walled gas line with a perforated inner pipe and an inert gas cushion to convey excited species from a remote plasma generator to a reactor, along with electrical biasing of the gas line to prevent collisions and recombination, thereby extending the lifespan of excited species and reducing damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If in situ plasma generation is used to provide excited species to the substrate, then the substrate receives sufficient excited species for processing, but the substrate material suffers damage

Engineering Contradiction:
Improveexcited species deliveryVSAvoidsubstrate damage
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

A gas line acts as an intermediary transport channel between the remote plasma generator and the substrate. The gas line conveys excited species generated remotely to the substrate without requiring in-situ plasma generation, thereby avoiding substrate damage while maintaining sufficient excited species delivery

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces the mechanical/electrical plasma generation system at the substrate location with a gas-phase transport system. Excited species are generated remotely and transported through the gas line, substituting the need for local plasma generation equipment and eliminating its harmful effects

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Object-affected harmful factors

If remote plasma generation is used to avoid substrate damage, then substrate damage is reduced, but excited species are lost during transport

Engineering Contradiction:
Improvesubstrate damageVSAvoidexcited species loss
Core Design Contradiction:
Object-affected harmful factorsVSLoss of substance

Solution Approach 1:

The gas line is electrically biased to create an electric field that modifies the transport parameters of excited species. This parameter change maintains excited species stability during transport, reducing recombination and loss while preserving the remote generation advantage

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The plasma generator operates in pulsed mode, generating plasma in periodic bursts. This periodic action allows the gas line to clear between pulses and prevents accumulated species from recombining, thereby reducing overall excited species loss during transport

Inventive Principle:
Principle #19Periodic action

3Reliability

If annealing is performed to repair plasma damage, then substrate material is restored, but processing cost increases and oxidation risk increases

Engineering Contradiction:
Improvesubstrate integrityVSAvoidprocessing cost
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gas line is biased to create a protective environment for excited species during transport, preventing their degradation before they reach the substrate. This preliminary protection eliminates the need for subsequent annealing repairs, reducing both cost and oxidation risk while maintaining substrate integrity

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system effectively conveys excited species with reduced loss and damage, enhancing process flexibility and reducing the need for costly annealing, while maintaining process efficiency and substrate integrity.

Implementation Method 1

a plasma generator in fluid communication with the plasma source vessel and configured to generate an excited species

Methodology Applied
Scientific EffectPlasma generation: Plasma

Implementation Method 2

A semiconductor processing system and method utilizing a double-walled gas line with a perforated inner pipe and an inert gas cushion to convey excited species from a remote plasma generator to a reactor

Methodology Applied
Scientific EffectInert gas cushion:

Implementation Method 3

along with electrical biasing of the gas line to prevent collisions and recombination

Methodology Applied
Scientific EffectElectrical biasing: Electric Field

Data Source

PatentUS20230290613A1Semiconductor processing system with gas line for transporting excited species and related methods
Publication Date: 2023.09.14 ASM IP HLDG BV
  • US20230290613A1 patent drawing
  • US20230290613A1 patent drawing
  • US20230290613A1 patent drawing

AI summary

A semiconductor processing system for providing a remotely generated excited species of a processing gas to a reactor. The semiconductor processing system comprises a remotely positioned plasma generator in fluid communication with a plasm source vessel and a gas line to convey an excited species generated in the plasma generator to the reactor. The gas line may be a double-walled pipe comprising an outer pipe and a perforated an inner pipe or a gas line to which DC bias voltage is applied.