Composite Si3N4 Sputtering Target for Low-Resistance DC Sputtering
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Solution Overview
Problem
Silicon nitride (Si3N4) exhibits high electrical insulation, making it difficult to adopt the DC magnetron sputtering method, which is desirable for high sputtering efficiency and productivity in producing thin films.
Innovation Solution
A sputtering target comprising Si3N4, SiC, MgO, and TiCN is developed, with specific resistance reduced to 10 mΩ·cm or less, enabling DC sputtering by optimizing the composition and sintering process, including X-ray diffraction peak intensity ratios and relative density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon nitride (Si3N4) is used as the sputtering target material, then the thin film exhibits high electrical insulation and good chemical stability, but the specific resistance becomes too high to enable DC magnetron sputtering
Solution Approach 1:
The patent creates a composite sputtering target material consisting of silicon nitride (Si3N4) combined with conductive materials such as titanium carbonitride (TiCN), tungsten carbide (WC), or molybdenum carbonitride (MoCN). This composite structure allows the thin film to inherit the high electrical insulation properties of Si3N4 while the conductive additives provide sufficient electrical conductivity to enable DC magnetron sputtering. The conductive materials are dispersed within the Si3N4 matrix to form a functionally integrated composite that resolves the contradiction between insulation and conductivity requirements.
Solution Approach 2:
The patent modifies the electrical conductivity parameter of the sputtering target by controlling the composition ratios, particle size distributions, and sintering conditions of the composite materials. By adjusting the amount of conductive additive (TiCN, WC, or MoCN) typically at 1-10 wt% and optimizing sintering temperature and pressure, the specific resistance is tuned to a range that enables DC magnetron sputtering while preserving the insulating properties of the Si3N4 base material. This parameter optimization resolves the contradiction by finding the optimal balance point between insulation and conductivity.
2Productivity
If DC magnetron sputtering is adopted for thin film production, then sputtering efficiency and productivity are improved, but the high electrical insulation of silicon nitride prevents effective electron bombardment and sputtering process
Solution Approach 1:
The patent develops a composite sputtering target where conductive materials (TiCN, WC, or MoCN) are integrated into the Si3N4 matrix. The conductive phase forms percolation pathways that allow electron transport during DC magnetron sputtering, enabling the sputtering process to proceed efficiently. Meanwhile, the Si3N4 matrix maintains its insulating properties in the deposited thin film, achieving both high productivity through DC sputtering and reliability through preserved electrical insulation.
Solution Approach 2:
The patent applies local quality by creating spatial differentiation within the sputtering target structure. The conductive materials are strategically distributed to provide localized conductivity pathways at the sputtering surface where electron bombardment occurs, while the bulk Si3N4 structure maintains its insulating properties. This local differentiation allows DC magnetron sputtering to function effectively at the surface level without compromising the overall electrical insulation of the material system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sputtering target with reduced specific resistance allows for effective DC sputtering, improving the production of thin films for magnetic recording media and thermal print heads, enhancing conductivity and stability.
Implementation Method 1
As one method for forming a thin film containing silicon nitride (Si3N4), it is conceivable to use a sputtering method.
Implementation Method 2
a step of sintering the mixed powder by a pressure sintering method in a vacuum atmosphere or an inert atmosphere to prepare a sintered body
Data Source
AI summary
A sputtering target containing silicon nitride (Si3N4) with reduced specific resistance of is provided. A sputtering target including Si3N4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less.