Particle Trajectory Control in MRAM Sputter Deposition
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Solution Overview
Problem
Magnetoresistive random-access memory (MRAM) technologies face contamination issues during film deposition due to target-related contamination, such as particles from the target surface, which affect film growth and device performance, and existing methods do not effectively address these issues.
Innovation Solution
A physical vapor deposition system equipped with a particle control system that uses a combination of magnetic and electrostatic forces to separate and remove contamination particles from target atoms, ensuring cleaner film deposition by adjusting the trajectories of charged particles within the processing chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If physical vapor deposition is used to deposit multiple layers of materials, then film deposition efficiency is improved, but target-related contamination particles are introduced into the deposited film
Solution Approach 1:
A particle control system is introduced as an intermediary component between the target and substrate. This system uses magnetic fields (from magnets) and electrostatic fields (from electrodes) to create a controlled region that deflects contamination particles while allowing target atoms to pass through and deposit on the substrate, thus mediating the deposition process to eliminate harmful particles
2Productivity
If target-related contamination particles are present during deposition, then deposition process continues, but film quality and device performance deteriorate
Solution Approach 1:
The particle control system extracts and removes contamination particles from the deposition process. Magnetic fields deflect charged particles away from the substrate, and electrostatic fields further separate particles from target atoms, effectively taking out harmful contaminants while maintaining the deposition process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively reduces contamination in the deposited film, improving film growth and device performance by efficiently separating contamination particles from target atoms, thereby enhancing the quality of the deposited layers.
Implementation Method 1
The particle control system may comprise at least one magnet pair configured inside the processing chamber
Implementation Method 2
A magnetic force can be induced by the magnetic field on a moving and charged particle
Implementation Method 3
The particle control system may comprise at least one pair of electrodes configured inside the processing chamber
Implementation Method 4
An electrostatic force can be induced by the electric field on a moving and charged particle
Implementation Method 5
A plasma can be generated in a processing chamber on a plasma cathode with a target
Implementation Method 6
By applying a power on the plasma cathode, the plasma can be generated
Implementation Method 7
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology and typically, such memory is fabricated by depositing multiple layers of materials using a physical vapor deposition system
Implementation Method 8
A magnetic force can be induced by the magnetic field on a moving and charged particle from the target
Data Source
AI summary
A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.