Plasma Chamber RF Harmonic Control for Uniform Substrate Processing
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Solution Overview
Problem
High-output high-frequency waves used in plasma processes generate harmonic components that affect the uniformity of plasma and performance in semiconductor fabrication and other applications, leading to suboptimal results.
Innovation Solution
A substrate processing apparatus with a signal analyzer to detect amplitude, phase, and frequency of signals, an RF signal generator to produce natural frequency signals, a harmonic controller to generate signals with different characteristics, and a filter to produce an RF control signal, which dynamically controls harmonics and improves plasma process efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high-output high-frequency waves are used to generate plasma, then plasma density is improved, but harmonic components are generated that adversely affect plasma uniformity
Solution Approach 1:
The patent generates harmonic components intentionally using a harmonic generator, then uses a controller to adjust their amplitude and phase so they interfere destructively with naturally occurring harmful harmonics in the plasma chamber, converting the harmful effect into a beneficial cancellation mechanism
Solution Approach 2:
The system uses sensors to detect the actual harmonic components present in the plasma chamber, feeds this information back to the controller, which then adjusts the harmonic generator's output to optimally cancel the detected harmonics, creating a closed-loop control system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively controls harmonics, enhancing plasma uniformity and process performance by generating signals with specific amplitudes, phases, and frequencies, thereby improving the efficiency of plasma processes in semiconductor fabrication and other applications.
Implementation Method 1
a sensor connected to a node between the matcher and the chamber and configured to sense a voltage and current of a first signal passing through the node
Implementation Method 2
a power detector configured to detect a power of the first signal based on the voltage and current of the first signal, received from the sensor
Implementation Method 3
an RF signal generator configured to generate an RF signal with a natural frequency based on the power of the first signal
Implementation Method 4
a harmonic control loop configured to control harmonics in the chamber based on the voltage and current of the first signal, received from the sensor
Implementation Method 5
an amplifier connected to the controller and configured to amplify the RF control signal, output from the controller
Implementation Method 6
a matcher connected between the amplifier and the chamber and configured to match an impedance of a signal output from the amplifier and an impedance of the chamber
Implementation Method 7
plasma is widely used in processes of fabricating a semiconductor device... a radio frequency (RF) capacitive coupled plasma (CCP) source or an inductively-coupled plasma (ICP) source
Data Source
AI summary
A substrate processing apparatus including the controller are provided. The controller includes: a signal analyzer configured to detect at least one of an amplitude, phase, and frequency of a first signal, which is provided to a chamber; a radio frequency (RF) signal generator configured to generate an RF signal with a natural frequency based on a power of the first signal; a harmonic controller configured to generate a second signal based on the power of the first signal and at least one of the amplitude, phase, and frequency of the first signal, the second signal having a different amplitude, a different phase, and/or a different frequency from the RF signal; an operator configured to perform an operation on the RF signal and the second signal; and a filter configured to generate an RF control signal by filtering an output signal of the operator.