Bidirectional Switch Chip Layout With Dual-Side Electrical Access

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Solution Overview

Problem

Current bidirectional switches realized in a single semiconductor device face challenges with insufficient power density and larger package sizes, as well as increased production efforts.

Innovation Solution

A semiconductor chip with monolithically integrated switching devices, where two switching devices form a bidirectional switch circuit connected in series, with internal electrical connections and optimized bond pad configurations, allowing for reduced material consumption and simplified processing, and improved thermal dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If bidirectional switches are realized in a single semiconductor device, then device integration is improved, but power density becomes insufficient

Engineering Contradiction:
Improvedevice integrationVSAvoidpower density
Core Design Contradiction:
Device complexityVSPower

Solution Approach 1:

The semiconductor chip is divided into two separate active regions, each containing a switching device (first and second switching devices). This segmentation allows each device to be optimized independently for high power density while maintaining integration on a single chip. The first switching device is optimized for current flow in one direction, while the second is optimized for the opposite direction, resolving the contradiction between integration and power density.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor chip are designed with different local characteristics. The first active region has properties optimized for one polarity (e.g., n-type majority carriers), while the second active region has properties optimized for the opposite polarity (e.g., p-type majority carriers). This local quality differentiation enables each region to achieve maximum power density for its specific function while contributing to the overall integrated bidirectional switch.

Inventive Principle:
Principle #3Local quality

2Device complexity

If bidirectional switches are realized in a single semiconductor device, then device integration is improved, but package size increases

Engineering Contradiction:
Improvedevice integrationVSAvoidpackage size
Core Design Contradiction:
Device complexityVSVolume of moving object

Solution Approach 1:

Two separate switching devices that would traditionally require separate packages are merged into a single semiconductor chip. The first and second switching devices are integrated on the same substrate with shared structural elements and interconnections, achieving device integration while minimizing the overall package volume through compact layout and efficient use of semiconductor material.

Inventive Principle:
Principle #5Merging (Combining)

3Device complexity

If bidirectional switches are realized in a single semiconductor device, then device integration is improved, but production effort increases

Engineering Contradiction:
Improvedevice integrationVSAvoidproduction effort
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The semiconductor structure is designed with pre-formed regions and interfaces that facilitate straightforward fabrication. The first and second active regions are created using standard semiconductor processing techniques with preliminary doping profiles and structural configurations that simplify subsequent manufacturing steps. This preliminary action in the design phase reduces production effort despite the integrated nature of the device.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS12136623B2Multi-device semiconductor chip with electrical access to devices at either side
Publication Date: 2024.11.05 INFINEON TECH AUSTRIA AG
  • US12136623B2 patent drawing
  • US12136623B2 patent drawing
  • US12136623B2 patent drawing

AI summary

A semiconductor chip includes a semiconductor body having a main surface and a rear surface opposite the main surface, a first bond pad disposed on the main surface, a second bond pad disposed on the rear surface, a first switching device that is monolithically integrated in the semiconductor body and has a first input-output terminal that is electrically connected to the first bond pad, and a second switching device that is monolithically integrated in the semiconductor body and has a first input-output terminal that is electrically connected to the second bond pad.