BiMEVOX Electrolyte Transistors for Room-Temperature CMOS Integration

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Solution Overview

Problem

Existing electrolyte-gated transistors (EGTs) face integration challenges with solid-state devices like CMOS, are temperature sensitive, unstable under humidity, and have poor compatibility with mainstream microelectronics fabrication processes, limiting their practical application.

Innovation Solution

Development of an electronic transistor using a BiMEVOX structure as an oxygen ion conducting electrolyte, which is stable at room temperature, insensitive to humidity, and compatible with CMOS fabrication processes, allowing for low voltage operation and reversible multilevel switching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If electrolyte-gated transistors are used to achieve ultralow-voltage operation and neuromorphic computing functionality, then computing performance and power efficiency are improved, but temperature stability and humidity resistance deteriorate

Engineering Contradiction:

Improvepower consumptionVSAvoidtemperature stability

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent changes the operational temperature parameter from high temperature (above 200°C) to room temperature by using BiMEVOX electrolyte material, which maintains stability and functionality at lower temperatures, thus resolving the contradiction between low power consumption and temperature stability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite electrolyte structure combining BiMEVOX material with specific channel and gate materials, creating a system that achieves both low power operation and environmental stability through material composition

Inventive Principle:

Principle #40Composite materials

2Use of energy by moving object

If electrolyte-gated transistors are used to achieve low voltage operation, then power consumption is reduced, but compatibility with CMOS fabrication processes deteriorates

Engineering Contradiction:

ImprovevoltageVSAvoidfabrication compatibility

Core Design Contradiction:

Use of energy by moving objectVSEase of manufacture

Solution Approach 1:

The patent designs the transistor structure and fabrication process to be universally compatible with existing CMOS manufacturing workflows, allowing the same fabrication process to produce both CMOS devices and electrolyte-gated transistors, thus achieving low voltage operation without sacrificing manufacturing compatibility

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Reliability

If Li-ion conductors are used in electrolyte-gated transistors, then ionic conductivity is improved, but stability in ambient atmosphere deteriorates

Engineering Contradiction:

Improveionic conductivityVSAvoidambient stability

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent replaces unstable Li-ion conductors with BiMEVOX electrolyte material that provides sufficient ionic conductivity while being stable in ambient conditions, effectively substituting a short-lived/unstable component with a durable alternative

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

4Reliability

If oxygen conductors are used in electrolyte-gated transistors, then ionic conduction is achieved, but operation temperature must be elevated above 200°C

Engineering Contradiction:

Improveionic conductionVSAvoidoperation temperature

Core Design Contradiction:

ReliabilityVSTemperature

Solution Approach 1:

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The BiMEVOX structure enables stable operation at room temperature, enhances manufacturing compatibility, and provides lower voltage and higher performance compared to CMOS technology, suitable for neuromorphic and stochastic computing applications.

Implementation Method 1

The electrolyte structure may comprise an oxygen ion conducting electrolyte structure

Methodology Applied

Scientific EffectOxygen ion conduction: Conduction (electrical)

Implementation Method 2

injection or extraction of ions (e.g., H+)

Methodology Applied

Scientific EffectElectrochemical ion injection: Electrolysis

Data Source

PatentEP4356441B1Electronic transistors

Publication Date: 2025.08.06 FUNDACIO INST DE RECERCA & ENERGIA DE CATALUNYA

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AI summary

The present disclosure relates to an electronic transistor comprising a body comprising at least an electrolyte structure, a channel provided in contact with the electrolyte structure, a gate provided in contact with the electrolyte structure; at least three contact elements configured to be connected to an external circuit, at least one of the contact elements, referenced as Gate contact element, being separated from the electrolyte structure by means of the gate, and the other contact elements, referenced as Source contact element and Drain contact element, being interconnected and being separated from the electrolyte structure by means of the channel. The electrolyte structure comprises an oxygen ion conducting electrolyte structure, wherein the oxygen ion conducting electrolyte structure comprises a BiMEVOX structure, where Bi is Bismuth, ME is a Metal, V is Vanadium and OX is an OXide.