Binary Group 15 Precursors for Ultrapure Semiconductor Deposition
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Solution Overview
Problem
Current methods for producing multinary 13/15 semiconductors, such as Ga(As1-xNx), are inefficient in terms of energy use and atom efficiency, often result in carbon contamination, and require high synthesis effort due to the use of multiple precursor compounds with different disintegration temperatures and vapor pressures.
Innovation Solution
The use of binary group 15 element compounds as single source precursors in vapor deposition processes, specifically compounds with the formula R1R2E-E'R3R4, where E and E' are different group 15 elements, allows for the production of ultrapure, cost-efficient, and reproducible multinary 13/15 semiconductor layers at lower temperatures, eliminating the need for organically substituted nitrogen sources and reducing carbon contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If organically substituted nitrogen compounds (e.g., 1,1 dimethyl hydrazine) are used as nitrogen sources, then nitrogen can be incorporated into the 13/15 semiconductor, but carbon contamination occurs and opto-electronic characteristics are impaired
Solution Approach 1:
The patent changes the chemical composition parameter of the nitrogen source from organic compounds to binary group 15 element compounds (specifically compounds containing nitrogen and another group 15 element like phosphorus or arsenic). This parameter change eliminates carbon contamination while maintaining nitrogen incorporation capability, directly resolving the contradiction between achieving nitrogen content and avoiding carbon contamination.
2Quantity of substance
If multiple precursor compounds with different disintegration temperatures are used to produce multinary 13/15 semiconductors, then the desired semiconductor composition can be achieved, but the process complexity and synthesis effort increase
Solution Approach 1:
The patent combines multiple precursor functions into a single binary group 15 element compound that contains both nitrogen and another group 15 element. This merging eliminates the need for separate precursor compounds with different disintegration temperatures, reducing process complexity while maintaining the ability to produce multinary 13/15 semiconductor compositions.
3Quantity of substance
If high partial pressures are used with nitrogen sources to achieve sufficient nitrogen incorporation, then nitrogen content can be increased, but the efficiency of the method decreases due to unfavorable molar relationships
Solution Approach 1:
The patent changes the partial pressure parameter to lower values when using binary group 15 element compounds as nitrogen sources. The balanced molar relationship in these compounds (1:1 ratio of group 15 elements) eliminates the need for high partial pressures and unfavorable molar relationships, simultaneously improving nitrogen incorporation efficiency and overall method productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the simple, secure, and energy-efficient production of multinary 13/15 semiconductor layers with defined opto-electronic characteristics, improving atom efficiency and reducing by-products, while allowing for precise control of nitrogen content and opto-electronic properties.
Implementation Method 1
The representation of 13/15 semiconductors is usually achieved by deposition from the gas phase. Important production methods are, for instance, metal-organic chemical vapor deposition (MOCVD) and metal-organic vapor phase epitaxy (MOVPE).
Implementation Method 2
The disintegration of the precursors is directly affected by the process temperature and the process pressure. Since precursors usually have relatively high disintegration temperatures, the process temperatures applied usually have to be high respectively.
Data Source
Figure 1~2
AI summary
The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E'R3R4 (I) or R5E(E'R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1 - C10) and an aryl group, and E and E' are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations - compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.