Bit Line Discharge Circuit for Stable Memory Voltage Control

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Solution Overview

Problem

The stability of bit line discharge in memory operations is poor, leading to potential circuit abnormalities due to uncontrollable discharge speeds, which can cause issues like triggering parasitic NPN circuits and voltage leaks.

Innovation Solution

A bit line discharge circuit with a transistor and controlled discharge branches, including a control branch and a first discharge branch, to manage discharge speed and stability, utilizing voltage thresholds and power supplies to ensure controlled discharge.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If bit line discharge is performed without controlled discharge branches, then the discharge structure is simple, but the discharge speed becomes uncontrollable causing circuit abnormalities

Engineering Contradiction:
Improvedischarge structureVSAvoiddischarge stability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The discharge circuit is segmented into multiple independent discharge branches (first discharge branch and second discharge branch), each with its own control mechanism. This segmentation allows independent control of discharge paths, enabling precise control over discharge speed and preventing circuit abnormalities while maintaining reasonable structural complexity.

Inventive Principle:
Principle #1Segmentation

2Productivity

If discharge speed is increased to improve efficiency, then productivity increases, but circuit abnormalities are triggered due to unstable discharge

Engineering Contradiction:
Improvedischarge efficiencyVSAvoiddischarge stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The discharge circuit employs dynamic control through multiple discharge branches that can be selectively activated based on operational requirements. The first discharge branch handles high-speed discharge when needed, while the second discharge branch provides stable discharge control, allowing the system to dynamically adjust discharge characteristics to maintain both efficiency and stability.

Inventive Principle:
Principle #15Dynamics

3Device complexity

If a single discharge path is used, then the circuit structure is simple, but voltage fluctuations occur during discharge

Engineering Contradiction:
Improvecircuit structureVSAvoidvoltage stability
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The circuit changes discharge parameters by selecting different discharge branches based on voltage levels and operational states. The first discharge branch is used for initial high-voltage discharge, while the second discharge branch handles subsequent voltage levels, thereby maintaining voltage stability throughout the discharge process without requiring an overly complex circuit structure.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12573435B2Memory, operation method of memory, and memory system
Publication Date: 2026.03.10 YANGTZE MEMORY TECH CO LTD
  • US12573435B2 patent drawing
  • US12573435B2 patent drawing
  • US12573435B2 patent drawing

AI summary

According to some aspects, a memory includes a bit line discharge circuit and a bit line coupled to the bit line discharge circuit. The bit line discharge circuit includes a transistor, a control branch, and a first discharge branch. A gate of the transistor is connected with the control branch. One of a source or a drain of the transistor is connected with the first discharge branch. Another of the source or the drain of the transistor is connected with the bit line. The control branch is configured to turn on the transistor. The first discharge branch is configured to discharge the bit line at a set discharge speed when the transistor is turned on.