Bitline Voltage Ramping for Low-Power Non-Volatile Memory Reads
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Solution Overview
Problem
Existing non-volatile memory technologies face inefficiencies in power consumption during sensing operations, particularly in transitioning bitline voltages, leading to increased power usage and potential errors.
Innovation Solution
A method is introduced where the bitline voltage is ramped down after transitioning the wordline voltage and then ramped back up before sensing, optimizing power usage and reducing errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If bitline voltage is maintained at high level during wordline voltage transition, then sensing operation can proceed continuously, but power consumption increases
Solution Approach 1:
The bitline voltage is periodically adjusted: ramped down during wordline voltage transition to reduce power consumption, then ramped back up before sensing operation to maintain functionality. This periodic adjustment optimizes the trade-off between power savings and operational continuity.
2Use of energy by moving object
If bitline voltage is ramped down during wordline transition, then power consumption is reduced, but voltage stability may be compromised
Solution Approach 1:
The bitline voltage is ramped back up in advance before the sensing operation begins. This preliminary action ensures that the voltage is restored to the required level for stable sensing, preventing potential errors while maintaining power savings during the transition period.
3Use of energy by moving object
If bitline voltage is rapidly ramped down, then power savings are maximized, but voltage transition time increases
Solution Approach 1:
The bitline voltage transition is performed dynamically with controlled ramping rates. The voltage is ramped down at an optimized rate to maximize power savings, then ramped back up at an appropriate rate to minimize total transition time. This dynamic adjustment balances power efficiency with time constraints.
Data Source
AI summary
A memory device includes a set of memory cells and a control circuit coupled to the set of memory cells. The control circuit is configured to transition a wordline voltage of a wordline associated with a target memory cell of the set of memory cells from a first wordline voltage level to a second wordline voltage level. While the wordline voltage settles at the second wordline voltage level, the control circuit cuts off current to the target memory cell by at least one of temporarily ramping down a bitline voltage from a first bitline voltage level to a second bitline voltage level, temporarily ramping down a select gate voltage from a first select gate voltage level to a second select gate voltage level, and temporarily ramping up a source line voltage from a first source level to a second source level.


