Bitline Voltage Adjustment for Defective Deck Memory Devices

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Solution Overview

Problem

Memory devices with both defective and functional decks experience increased error rates due to threshold voltage distribution shifts during read operations, as existing read schemes do not account for the unique characteristics of 'half good' memory devices with defective decks.

Innovation Solution

Implementing adaptive adjustment of bitline voltages during the program verify phase, where the memory sub-system controller determines the presence of defective and functional decks and applies a higher PV bitline voltage to compensate for threshold voltage shifts, using data structures to identify and adjust voltages based on deck configurations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing read schemes are used in memory devices with defective decks, then the device can operate, but error rates increase due to threshold voltage distribution shifts

Engineering Contradiction:
Improveerror rateVSAvoidread scheme adaptability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent implements dynamic adjustment of bitline voltages during the program verify phase based on the detected deck configuration. The system transitions from static read schemes to dynamic voltage adjustment, where the bitline voltage is adaptively changed according to whether defective decks are present, thereby resolving the contradiction between maintaining operational simplicity and adapting to different device states

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the bitline voltage parameter during the program verify phase based on the deck configuration. By adjusting the voltage level according to the presence of defective decks, the system compensates for threshold voltage distribution shifts and reduces error rates without requiring a completely new read scheme

Inventive Principle:
Principle #35Parameter changes

2Reliability

If adaptive bitline voltage adjustment is implemented, then error rates are reduced, but device complexity increases

Engineering Contradiction:
Improveerror rateVSAvoidvoltage adjustment mechanism
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent performs preliminary detection of defective decks during manufacturing or initialization, and stores this information in a data structure. This preliminary action allows the system to retrieve pre-determined voltage adjustment values during operation, avoiding the need for complex real-time analysis and reducing operational complexity

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces a data structure as an intermediary between the deck configuration and the voltage adjustment mechanism. This data structure stores the relationship between defective deck patterns and corresponding bitline voltage values, simplifying the control logic by providing a direct lookup mechanism rather than requiring complex computational decisions

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If higher PV bitline voltage is applied during program verify, then threshold voltage shifts are compensated, but energy consumption increases

Engineering Contradiction:
Improvethreshold voltage stabilityVSAvoidbitline voltage energy
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies higher bitline voltages only during the program verify phase and only when defective decks are detected, rather than continuously or universally. This localized application of increased voltage compensates for threshold voltage shifts where needed while minimizing unnecessary energy consumption during other operations

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20240185935A1Bitline voltage adjustment for program operation in a memory device with a defective deck
Publication Date: 2024.06.06 MICRON TECHNOLOGY INC
  • US20240185935A1 patent drawing
  • US20240185935A1 patent drawing
  • US20240185935A1 patent drawing

AI summary

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a program operation on a set of cells in a block of the memory device, the block comprising a plurality of decks; determining whether at least one second deck of the plurality of decks is physically disposed below at least one first deck of the plurality of decks, wherein the at least one first deck satisfies a criterion pertaining to a functionality of a deck, and the at least one second deck of the plurality of decks does not satisfy the criterion; and responsive to determining that the at least one second deck is physically disposed below the at least one first deck, performing the program operation on the set of cells in the block using a first bitline voltage applied during a program verify phase, wherein the first bitline voltage is higher than a default program verify bitline voltage.