Read-Only Memories TRIZ Cases

A non-volatile memory device uses a global reference current generation circuit to adjust current magnitude based on unit cell position.

A page buffer circuit uses parallel sensing branches to process multiple bit line segments simultaneously.

Distributed calibration information corrects sense amplifier offsets, improving neural network computation accuracy.

Memory controllers adjust erase verify voltage thresholds based on programmed page ratios, preventing degradation from uniform pre-program voltages.

A block decoder design utilizing depletion high voltage NMOS and PMOS transistors to generate selection signals.

Shared sense amplifier regions service multiple sub-planes, reducing bit line length and capacitance to achieve sub-microsecond read latency.

Applying a local voltage to adjacent word lines prevents potential differences that cause program disturbance in highly integrated flash memory devices.

A page buffer circuit uses a control circuit to operate transistors for transmitting ground voltage during initialization and precharge periods.

A non-volatile memory read method applies conditional soft decision voltages to correct data errors after initial hard decision reads.

Segmented latches in the sense amplifier supply four distinct voltages to reduce threshold distribution width and minimize write cycles.

Segmented power supplies maintain high threshold voltages during standby, reducing leakage current.

A bit line forcing voltage clamp circuit stabilizes target voltage levels during programming operations in nonvolatile memory devices.

A storage device manages power loss by segmenting operations into essential and non-essential categories to preserve data integrity.

Dynamic bitline voltage adjustment during program verify phases reduces error rates caused by threshold voltage distribution shifts in defective decks.

Digital circuitry counts clock cycles to measure read margin, eliminating analog inaccuracies and false test results.

A semiconductor storage device applies rising erasure voltage pulses to memory cell wells.

Control logic applies program limit voltages to bit lines based on cell status, omitting intermediate verify operations to reduce programming time.

Segmenting 3D NAND stacks into independently controlled planes lowers power consumption and noise while maintaining high memory capacity.

A flash memory device initiates bit-line precharge for the next address during the current read cycle to improve sequential access speed.

Partitioning NAND flash memory into retention regions manages write cycles, extending lifespan while reducing cost per bit.

Tracking erase failures at sub-block granularity isolates defective regions, preserving usable capacity and reducing redundancy overhead in NAND flash memory.

Segmenting select transistor functions into two independent word lines reduces punch-through voltage and protects device reliability during write operations.

A memory device adjusts verifying voltage levels based on programming loop counts to maintain consistent data recognition across multi-level cells.

Permanent memory cells fixed in a third state protect confidential data, avoiding chip size increases caused by adding encryption circuits.

Control circuit isolates defective planes during concurrent erase operations to maintain data integrity.

A control unit selects optimal internal voltage levels to set input buffer references for memory devices.

A sense amplifier maintains read node voltage below the threshold to minimize heating in non-volatile memory cells.

Sampling read operations count cells in specific regions to autonomously adjust read voltages, resolving the trade-off between storage capacity and read margin.

A NAND flash memory write cycle method equalizes source and bit line voltage levels during pulse intervals to reduce pre-charge time.

A sense current generator adjusts electrical conductivity based on node voltage to maintain stable read operations in high-density memory arrays.

Bit line select gates link page buffers to multiple bit lines, increasing data read/write throughput without expanding die size.

An auxiliary power supply sustains data transfer during low voltage events, preventing data loss without complex regulation circuits.

A self-annealing process manages memory cell temperature to reduce interfacial defects without external heating.

Applying a single programming pulse to conditioned sub-blocks reduces latency and eliminates sequential write cycles in multi-level cell arrays.

A word line voltage application unit applies temperature-compensated read and pass voltages to selected and unselected word lines.

A non-volatile memory device applies differentiated pass voltages to unselected word lines adjacent to selected lines.

Volatile memory stores defective address data to enable rapid remapping, eliminating the nanosecond-scale delays caused by traditional antifuse programming.

Segmented programming pulses with periodic verification suppress charge leakage and under-programming in flash memory devices.

Dynamic voltage levels stabilize program operations by controlling FN tunneling speed, reducing excessive threshold voltage changes in memory cells.

A dual polarity charge pump applies negative voltage to flash memory cells for soft erase operations.

A semiconductor memory apparatus transfers word line control voltages using a dedicated discharge unit to manage operational periods.

A semiconductor circuit computes optimal solutions by mimicking quantum annealing processes using weight signals and input logic.

A memory chip activation signal generator combines existing chip enable signals to produce multiple independent activation outputs.

Distinct verification voltages optimize threshold voltage distributions in multi-level cell memory, reducing read-failure rates during high-density storage.

A secure programming circuit randomizes bit order in flash memory, preventing side-channel attacks by scrambling power consumption patterns during programming.

A soft erase state maintains threshold voltages between reference levels to reduce wear on flash memory cell arrays.

Dynamic clock period control reduces current consumption by matching pump driving force to specific memory operations.

A controller determines distinct calibration intervals for read voltage thresholds across memory pages to reduce overhead.

Switching unpassed blocks to single-plane mode or marking them bad prevents neighbor plane disturb, maintaining programming speed and reliability.

Alternating row and tier programming in all bit line memory arrays enables concurrent SLC and MLC operations across independent bit line groups.