Multi-Plane Memory Erase Failure Recovery

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

As memory cells decrease in size and memory arrays increase in density, maintaining data integrity becomes challenging due to increased manufacturing defects such as shorting between word lines, which can lead to data corruption during programming and erasing operations, especially in multi-plane erase operations.

Innovation Solution

The technology involves performing a multi-plane erase by concurrently erasing multiple planes, and if the erase fails, successively disconnecting individual planes from the others until a multi-plane erase passes, thereby isolating and addressing defective planes without marking all blocks as bad.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If multi-plane erase is performed concurrently, then productivity is improved, but reliability deteriorates due to increased manufacturing defects causing data corruption

Engineering Contradiction:
Improveerase speedVSAvoiddata integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent segments the memory system into multiple independent planes that can be erased concurrently. Each plane is treated as a separate erasable unit with its own block structure, allowing parallel erase operations while maintaining the ability to isolate and manage defects in individual planes without affecting others.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the operational parameters by implementing different erase strategies based on defect detection. When manufacturing defects are detected in specific planes, the system adjusts erase parameters to exclude defective blocks from concurrent erase operations, thereby maintaining data integrity while preserving productivity in healthy planes.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If defective blocks are marked as bad to ensure reliability, then data integrity is improved, but productivity deteriorates due to loss of usable memory space

Engineering Contradiction:
Improvedata integrityVSAvoidmemory utilization
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies local quality by marking only the specific defective blocks as bad within affected planes, rather than marking entire planes or all blocks across all planes. This localized approach ensures data integrity in defective areas while preserving the usability of good blocks in both the same and other planes, thereby maintaining high memory utilization.

Inventive Principle:
Principle #3Local quality

3Reliability

If all blocks are marked as bad when erase fails, then reliability is improved, but productivity deteriorates due to unnecessary loss of good blocks

Engineering Contradiction:
Improvedata integrityVSAvoiderase operation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent extracts and isolates only the defective blocks caused by manufacturing defects when an erase operation fails. By identifying and marking only the specific bad blocks rather than all blocks in the plane, the system recovers and preserves good blocks for future use, reducing unnecessary loss of memory capacity and improving overall productivity.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS12334160B2Apparatus and method for detecting neighbor plane erase failures
Publication Date: 2025.06.17 SANDISK TECHNOLOGIES LLC
  • US12334160B2 patent drawing
  • US12334160B2 patent drawing
  • US12334160B2 patent drawing

AI summary

An apparatus is provided that includes a control circuit coupled to a plurality of non-volatile memory cells disposed in a plurality of planes. The control circuit is configured to concurrently erase a block of memory cells in each of the plurality of planes, determine that the concurrent erase failed, disconnect a first one of the planes from the plurality of planes to form first remaining planes, and concurrently erase a block of memory cells in each of the first remaining planes.