Non-volatile Memory Read Method Using Conditional Soft Decision Voltages

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Solution Overview

Problem

Flash memory devices face increased error rates and reliability issues as the number of bits programmed in each memory cell increases, due to overlapping threshold voltage distributions, leading to read failures and data corruption.

Innovation Solution

Implementing a method that uses both hard decision and soft decision voltages for reading memory cells, allowing for error correction by determining if errors are correctable with initial hard decision results, and if not, employing additional soft decision read operations to improve accuracy, thereby reducing performance loss and overhead in error correction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multi-bit data is programmed in each memory cell to increase storage capacity, then integration density is improved, but read reliability deteriorates due to overlapping threshold voltage distributions

Engineering Contradiction:
Improvedata storage capacityVSAvoidread reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent segments the read operation into multiple stages: first a hard decision read to obtain initial data, then conditional soft decision reads to correct errors. This segmentation allows the system to handle high-capacity multi-bit cells while maintaining reliability by applying different read strategies to different data portions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the voltage parameter dynamically during the read process. It uses hard decision voltages for initial reading, then switches to soft decision voltages for error correction when needed. This parameter change enables the system to adapt to the degraded signal quality caused by multi-bit programming.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If soft decision read operations are performed to correct errors in multi-bit cells, then read reliability is improved, but performance loss increases due to additional read operations

Engineering Contradiction:
Improveread reliabilityVSAvoidread speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies partial action by performing soft decision reads only partially - specifically, only when errors are detected in the hard decision read results. The controller conditionally executes soft decision reads based on error detection, avoiding unnecessary additional read operations for error-free data and thus minimizing performance loss.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The patent implements feedback control where the controller monitors the results of hard decision reads, detects errors, and then decides whether to initiate soft decision read operations. This feedback mechanism ensures that performance-critical paths are not unnecessarily delayed while still providing error correction when needed.

Inventive Principle:
Principle #23Feedback

3Reliability

If error correction operations are performed on all read data, then data reliability is improved, but overhead increases due to processing all data through correction

Engineering Contradiction:
Improvedata reliabilityVSAvoidprocessing overhead
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies partial action by performing error correction only on data that actually contains errors. The controller detects errors in hard decision read results and then selectively applies soft decision reads and correction operations only to the affected data portions, rather than processing all read data through the full correction pipeline.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS8576622B2Non-volatile memory device and read method thereof
Publication Date: 2013.11.05 SAMSUNG ELECTRONICS CO LTD
  • US8576622B2 patent drawing
  • US8576622B2 patent drawing
  • US8576622B2 patent drawing

AI summary

In one embodiment, the method for reading memory cells in an array of non-volatile memory cells includes reading data from a memory cell using a set of hard decision voltages and at least a first set of soft decision voltages based on a single read command.