Bipolar Junction Transistor Fin-Shaped Regions
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Solution Overview
Problem
Current bipolar junction transistor (BJT) designs are hindered by the large area of the base and collector regions, which affects device performance.
Innovation Solution
The design includes an emitter region, base region, and collector region with aligned edges and equivalent widths, or fin-shaped structures, arranged in specific patterns to optimize area utilization and separation using shallow trench isolation and well structures, suitable for both NPN and PNP types.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional BJT design is used, then the device structure is simple, but the base region and collector region occupy large area affecting performance
Solution Approach 1:
The base region and collector region are segmented into multiple discrete regions (first base region, second base region, first collector region, second collector region) arranged in an alternating pattern with the emitter region. This segmentation allows for optimized area utilization while maintaining device functionality, directly addressing the contradiction between structural simplicity and area reduction.
Solution Approach 2:
The patent transitions from a conventional planar arrangement to a multi-dimensional configuration where regions are arranged both horizontally (alternating emitter-base-collector pattern) and vertically (multiple layers). This dimensional change enables compact area utilization while preserving the simple alternating structure, resolving the contradiction between device simplicity and area reduction.
2Reliability
If base region and collector region area is reduced, then device performance improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs asymmetric design where the base regions and collector regions have different configurations and positions relative to the emitter region. This asymmetric arrangement, combined with the alternating pattern, creates a unique structural fingerprint that simplifies alignment verification during manufacturing, reducing precision requirements while maintaining performance.
Solution Approach 2:
The alternating arrangement of emitter, base, and collector regions is designed from the outset to inherently guide the manufacturing process. The predetermined alternating pattern serves as a built-in alignment reference, allowing manufacturers to achieve precise region alignment more easily, thus reducing manufacturing precision requirements while ensuring optimal device performance.
Data Source
AI summary
A bipolar junction transistor includes: an emitter region; a base region; and a collector region, wherein each of the emitter region, the base region, and the collector region comprises fin-shaped structures. Preferably, the emitter region, the base region, and the collector region are disposed along a first direction and the fin-shaped structures are disposed along a second direction, in which the first direction is orthogonal to the second direction.