Block Copolymer Self-Assembly for Lithography Precision

Solution Overview

Problem

Current lithography technologies face challenges such as increased costs and decreased throughput as pattern features become smaller, necessitating a method for forming precise patterns with high dimensional accuracy.

Innovation Solution

A pattern forming method involving the use of microphase separation of block copolymers, guided by a base layer and neutralization film with specific line sections, to form self-assembly patterns with alternating polymer portions, allowing for the selective removal of certain polymer segments and transfer of patterns to a processing target film.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional lithography technologies are used to form smaller pattern features, then manufacturing precision is improved, but cost increases and throughput decreases

Engineering Contradiction:

Improvepattern feature precisionVSAvoidthroughput

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The block copolymer system performs self-assembly to form periodic patterns without requiring external lithographic equipment. The polymer chains automatically organize into ordered structures through microphase separation, eliminating the need for expensive lithography machinery and enabling high-throughput production while maintaining nanometer-scale precision

Inventive Principle:

Principle #25Self-service

Solution Approach 2:

The patent replaces mechanical lithographic systems with a chemical self-assembly process. Instead of using physical light exposure and mechanical patterning tools, the invention uses chemical principles of block copolymer microphase separation to create patterns, thereby reducing equipment costs and increasing manufacturing throughput

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If conventional lithography technologies are used to form smaller pattern features, then manufacturing precision is improved, but cost increases

Engineering Contradiction:

Improvepattern feature precisionVSAvoidmanufacturing cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The block copolymer system performs self-assembly to form periodic patterns without requiring external lithographic equipment. The polymer chains automatically organize into ordered structures through microphase separation, eliminating the need for expensive lithography machinery and enabling high-throughput production while maintaining nanometer-scale precision

Inventive Principle:

Principle #25Self-service

Solution Approach 2:

The patent replaces mechanical lithographic systems with a chemical self-assembly process. Instead of using physical light exposure and mechanical patterning tools, the invention uses chemical principles of block copolymer microphase separation to create patterns, thereby reducing equipment costs and increasing manufacturing throughput

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the formation of precise self-assembly patterns in desired areas with improved dimensional accuracy and efficiency, reducing costs and increasing throughput in semiconductor manufacturing.

Implementation Method 1

Self-assembly is achieved by energy stabilization in fluid materials to form patterns therefrom having a high degree of dimensional accuracy. Especially, a technology using microphase separation of a block copolymer can form periodic structures in a variety of shapes

Methodology Applied

Scientific EffectMicrophase separation:

Data Source

PatentUS9244343B2Pattern forming method and mask pattern data

Publication Date: 2016.01.26 KIOXIA CORP

AI summary

According to one embodiment, a pattern forming method includes: forming a guide layer, including a base layer and a neutralization film with a plurality of parallel line sections, on a processing target film, forming a polymer material containing first polymer segments and second polymer segments, on the guide layer, forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections, and selectively removing the second polymer portions. The widths of line sections of both ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion.