Block Decoder Circuit for Semiconductor Memory Devices
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Solution Overview
Problem
Existing semiconductor memory devices require larger block decoders due to the complexity of generating and applying various voltage levels for selecting memory blocks, which hinders size reduction and operational efficiency.
Innovation Solution
A block decoder is designed with a control signal generating circuit, a potential level switch circuit, and a voltage apply circuit to output block selecting signals with high or negative potential levels, allowing for efficient transmission of operating voltages to memory blocks through a path circuit, thereby reducing the number of transistors and overall size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a traditional block decoder is used to generate and apply various voltage levels for selecting memory blocks, then the memory device can perform read and write operations, but the block decoder size increases and operational efficiency decreases
Solution Approach 1:
The block decoder is segmented into three functional circuits: a control signal generating circuit that decodes address signals, a potential level switch circuit that switches between internal power potential level and negative potential level, and a voltage apply circuit that applies the appropriate block selecting signal. This segmentation allows each circuit to perform a specific function with optimized transistor usage, reducing the overall decoder size while maintaining operational efficiency.
Solution Approach 2:
The potential level switch circuit dynamically switches the block selecting signal between two potential levels (internal power potential level and negative potential level) based on the decoded address signals. This dynamic switching capability enables the decoder to efficiently select different memory blocks without requiring a large number of transistors for static voltage level management.
2Adaptability or versatility
If multiple voltage levels are generated and applied for block selection, then memory blocks can be selectively accessed, but the circuit complexity increases
Solution Approach 1:
The voltage apply circuit is designed to universally apply different voltage levels (high potential level or negative potential level) to selected memory blocks based on the block selecting signal. This multi-functional circuit can handle both read and write operations by simply changing the potential level, eliminating the need for separate dedicated circuits for different operations and reducing overall circuit complexity.
3Area of stationary object
If the block decoder uses a simplified structure to reduce size, then the device area decreases, but the ability to generate and apply various voltage levels may be compromised
Solution Approach 1:
Each circuit within the block decoder is optimized for its specific function: the control signal generating circuit is optimized for address decoding, the potential level switch circuit is optimized for switching between voltage levels, and the voltage apply circuit is optimized for applying the selected voltage. This local optimization ensures that each component performs its function reliably while using the minimum necessary transistors, maintaining overall system reliability with reduced area.
Data Source
AI summary
There are provided a block decoder including a control signal generating circuit suitable for generating a control signal in response to address signals, a potential level switch circuit suitable for outputting an internal voltage having an internal power potential level or a negative potential level in response to the control signal, and a voltage apply circuit suitable for outputting a block selecting signal having a high potential level higher than the internal power potential level in response to the control signal and the internal voltage having the internal power potential level, or outputting the internal voltage having the negative potential level as the block selecting signal in response to the control signal.