Block Power Switch with Embedded ESD Protection and Adaptive Body Biasing
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Solution Overview
Problem
Conventional ESD protection circuits in integrated circuits consume significant area, making it challenging to achieve smaller form factors as IC dimensions shrink, increasing the sensitivity of transistors to electrostatic discharge (ESD) stress.
Innovation Solution
A block power switch with embedded ESD protection and adaptive body biasing is designed, where the same transistors are used for both power switching and ESD protection, reducing chip area by sharing components and employing a two-stage wake-up strategy to limit current transitions, and utilizing RC clamps within the block power switch bank.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ESD protection circuits are used, then ESD protection is provided, but chip area consumption increases
Solution Approach 1:
The patent combines ESD protection circuitry with power switch circuitry into a single integrated structure. The same transistors and circuit components serve dual purposes: functioning as power switches for circuit block control and providing ESD protection. This merging eliminates the need for separate ESD protection circuits, thereby reducing chip area consumption while maintaining reliable ESD protection capabilities
Solution Approach 2:
The power switch transistors are designed to perform multiple functions simultaneously. During normal operation, they function as power switches for enabling/disabling circuit blocks. During ESD events, the same transistors activate to provide ESD protection by shunting discharge currents. This multi-functionality allows a single circuit element to address both power management and ESD protection needs, reducing overall chip area
2Area of stationary object
If IC dimensions are shrunk, then smaller form factors are achieved, but ESD tolerance of transistors decreases
Solution Approach 1:
The patent implements adaptive body biasing that dynamically adjusts the body voltage of the power switch transistor based on operating conditions. During ESD events, the body bias is adjusted to enhance the transistor's ESD tolerance temporarily. This dynamic adjustment allows smaller transistors to achieve adequate ESD protection by optimizing their electrical characteristics in real-time, rather than requiring larger physical dimensions for static protection
Solution Approach 2:
The invention changes the electrical parameters of the transistor during ESD events through adaptive body biasing. By adjusting the body voltage parameter dynamically, the transistor's threshold voltage and current handling capabilities are modified to withstand ESD surges. This parameter change allows smaller transistors to achieve higher ESD tolerance without increasing physical dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces leakage power, area consumption, and leakage current, while providing robust ESD protection, enabling smaller form factors and efficient power management in multi-core system-on-chip designs.
Implementation Method 1
Electrostatic discharge (ESD) events are a common part of everyday life and some of the larger discharges are detectable by humans. ESD is a transient surge in voltage (negative or positive) that may induce a large current in a circuit.
Implementation Method 2
Conventional diodes may be employed in ESD protection circuits to clamp the voltage of positive and negative ESD surges to shunt current and prevent excessive voltage from being applied to a protected circuit.
Implementation Method 3
Although not depicted, other types of conventional ESD circuitry may involve a resistor-capacitor (RC) clamp to provide ESD protection.
Data Source
Figure 1
Figure 2A~2B
Figure 3A~3C
AI summary
A block power switch may be embedded with electrostatic discharge (ESD) protection circuitry. A transistor portion of the block power switch may be allocated to act as part of ESD protection circuitry and may be combined with an RC clamp to provide ESD protection. Adaptive body biasing (ABB) may be applied to the block power switch to reduce on-chip area and decrease leakage current of the block power switch.