Thermally Conductive Bond Layer for 3D Multichip Heat Spreading
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Solution Overview
Problem
Current thermal management architectures for multichip composite devices, particularly those with 3D stacked dies, face challenges in efficiently removing heat due to insufficient heat spreading, leading to potential damage or performance throttling.
Innovation Solution
The implementation of thermally enhanced handle dies and bonding layers with high thermal conductivity materials, integrated fluidic cooling, and through vias to improve heat transfer and removal from chiplets and base dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a silicon handle die is used for heat spreading, then the device structure is mechanically stable, but the thermal conductivity is insufficient to prevent temperature exceedance
Solution Approach 1:
The patent changes the material parameter of the handle die from standard silicon to high thermal conductivity materials such as diamond, cubic silicon carbide, or graphite. This parameter change increases thermal conductivity by several times while maintaining mechanical stability, enabling effective heat spreading at high power densities without temperature exceedance
Solution Approach 2:
The patent employs composite material structures where a handle die made of high thermal conductivity material is bonded to the active dies. This composite approach combines the mechanical stability of the handle die with the superior thermal conductivity of materials like diamond or cubic silicon carbide, resolving the contradiction between structural integrity and heat spreading capability
2Power
If high power density is implemented in active dies, then computing device performance improves, but heat removal becomes insufficient causing device damage or throttling
Solution Approach 1:
The patent introduces a thermal interface layer or bonding material with high thermal conductivity as an intermediary between the active dies and the handle die. This intermediary efficiently transfers heat from the high power density active dies to the high thermal conductivity handle die, enabling sustained high power operation without compromising device reliability
Solution Approach 2:
The patent changes the thermal conductivity parameter of the handle die to values significantly higher than standard silicon (e.g., diamond with thermal conductivity >1000 W/mK). This parameter change allows the system to handle the heat generated by high power density active dies, maintaining device reliability while enabling higher power operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces temperatures in chiplets and base dies, enabling higher power capabilities and performance by enhancing heat spreading and transfer within the microelectronic devices.
Implementation Method 1
the layer comprising a material having a thermal conductivity greater than a thermal conductivity of the structural member
Implementation Method 2
enhancing heat spreading and transfer within the microelectronic devices
Data Source
AI summary
Microelectronic devices, assemblies, and systems include a multichip composite device having one or more chiplets bonded to a base die and an inorganic dielectric material adjacent the chiplets and over the base die. The multichip composite device is coupled to a structural member that is made of or includes a heat conducting material, or has integrated fluidic cooling channels to conduct heat from the chiplets and the base die.