Bond Type Flip-Chip LED Structure for Enhanced Heat Dissipation
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Solution Overview
Problem
The existing flip-chip light-emitting structures face issues with poor heat dissipation and large negative electrode areas, leading to reduced light-emitting efficiency and increased production costs due to the use of tin balls in bonding, which results in short circuits and limited contact area between the LED and substrate.
Innovation Solution
The use of bonded metal layers replaces tin balls, increasing the heat dissipation area and light-emitting efficiency by forming an epitaxy layer with n-type and p-type semiconductor layers, insulation layers, and bonded metal units connected to electrodes, allowing for effective bonding and eutectic packaging processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If tin balls are used to bond LED to substrate, then electrical connection is achieved, but heat dissipation area is limited and production cost increases
Solution Approach 1:
The bonded metal layer is divided into multiple isolated metal regions (first bonded metal unit and second bonded metal unit) that are electrically insulated from each other. This segmentation allows each metal region to independently connect to corresponding electrodes while collectively providing a large heat dissipation area on the substrate.
Solution Approach 2:
The invention transitions from point-contact tin balls to a planar bonded metal layer structure. By spreading the connection interface from zero-dimensional points to two-dimensional areas, the heat dissipation area is dramatically increased while maintaining electrical connectivity through the insulating layer configuration.
2Ease of manufacture
If tin balls are used for bonding, then LED can be mounted on substrate, but negative electrode area becomes overly large limiting light emitting area
Solution Approach 1:
The insulating layer is selectively positioned only where needed to electrically isolate the bonded metal layer regions. This localized insulation approach allows the bonded metal layer to extend closer to the light emitting area without causing short circuits, thereby maximizing the light emitting area while maintaining manufacturing capability.
3Reliability
If tin balls are used in bonding process, then electrical connection is established, but fused tin paste exudes and causes short circuit
Solution Approach 1:
The insulating layer acts as an intermediary barrier between the bonded metal layer and the underlying structure. This intermediate layer prevents the bonded metal layer material from exuding and causing short circuits while still allowing thermal conduction and electrical connection through designed via holes.
4Ease of manufacture
If conventional flip-chip bonding with tin balls is used, then LED can be bonded to substrate, but production cost increases due to complex process and large equipment requirements
Solution Approach 1:
The bonding process merges multiple functions into a single step: the bonded metal layer simultaneously provides electrical connection, heat dissipation, and mechanical bonding to the substrate. This consolidation eliminates the need for separate wire bonding and heat sinking steps, simplifying the manufacturing process and reducing equipment requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs, enhances heat dissipation, and increases light-emitting efficiency by ensuring a larger contact area between the LED and substrate, improving the overall performance and service life of the light-emitting structure.
Implementation Method 1
a light-emitting-diode (LED) made by bonding a metal layer and a substrate into shape
Implementation Method 2
form sequentially an n-type semiconductor layer, a multi-quantum-well light-emitting layer, and a p-type semiconductor layer on a carrier board, to produce an epitaxy layer
Implementation Method 3
increase its contact area effectively, hereby increasing its heat dissipation capability
Data Source
AI summary
A bond type flip-chip light-emitting structure and method of manufacturing the same. Firstly, form a positive electrode and a negative electrode on an epitaxy layer. Next, deposit an insulation layer on parts of the positive electrode and negative electrode, to expose respectively a positive electrode via hole and a negative electrode via hole. Then, form a bonded metal layer on the insulation layer, the positive electrode via hole, and the negative electrode via hole, so that the positive electrode and the negative electrode are on a same plane by means of the bonded metal layer. Finally, on a substrate, bond the first metal layer and the second metal layer onto the corresponding first bonded metal unit and the second bonded metal unit of the bonded metal layer, to form into shape, thus realizing a bond type flip-chip light-emitting structure.