Annular Bonded Interface for Gas-Sealed Integrated Device Cavities

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Solution Overview

Problem

In semiconductor device fabrication and packaging, existing adhesives used for sealing can be permeable to gases, leading to contamination and damage of sensitive integrated devices, and may create long-term reliability issues due to their properties.

Innovation Solution

The use of conductive and non-conductive interface features embedded in a bonded structure that directly connect semiconductor elements without an intervening adhesive, forming a sealed cavity with a metal pattern that reduces gas permeation, and includes features that mitigate dishing effects during processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If adhesives are used to seal the cavity, then the integrated device is sealed from the outside environs, but the adhesives are permeable to gases allowing contamination over time

Engineering Contradiction:
Improvesealing effectivenessVSAvoidgas permeation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent employs a composite bonding structure consisting of a first bonding layer and a second bonding layer with different material compositions. The first bonding layer provides initial bonding, while the second bonding layer with different properties (such as lower gas permeability) addresses the gas permeation issue. This composite approach allows the seal to simultaneously achieve strong adhesion and gas barrier properties that neither single material could provide alone.

Inventive Principle:
Principle #40Composite materials

2Strength

If solder is used to attach the cap, then strong bonding is achieved, but long term reliability issues arise

Engineering Contradiction:
Improvebonding strengthVSAvoidlong term reliability
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent divides the bonding interface into multiple discrete bonding layers rather than using a single bonding material. The first bonding layer and second bonding layer can be optimized for different functions - one for initial bond strength and another for long-term stability and gas barrier properties. This segmentation allows each layer to be tailored for specific performance requirements, avoiding the long-term reliability issues associated with single-material bonding like solder.

Inventive Principle:
Principle #1Segmentation

3Object-affected harmful factors

If a metal pattern is added to reduce gas permeation, then gas sealing is improved, but device complexity increases

Engineering Contradiction:
Improvegas permeationVSAvoidstructure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The bonding layers in the patent serve multiple functions simultaneously: they provide mechanical bonding between the cap and substrate, act as gas barrier layers, and can provide electrical connectivity. By designing the bonding layers to fulfill multiple roles, the patent reduces gas permeation without adding separate dedicated components, thereby avoiding increased device complexity while still achieving improved gas sealing.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12100684B2Bonded structures
Publication Date: 2024.09.24 ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC
  • US12100684B2 patent drawing
  • US12100684B2 patent drawing
  • US12100684B2 patent drawing

AI summary

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.