Bonded Silicon Electrode Cleaning via Segmented Application
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Solution Overview
Problem
The formation of non-contiguous polymer deposits on plasma-exposed surfaces of silicon electrodes in plasma processing chambers leads to etch rate drop and etch uniformity drift due to 'black silicon' formation, which contaminates and alters the morphology of the silicon surface, affecting dielectric etching performance.
Innovation Solution
A method to clean bonded electrode assemblies using a cleaning solution that prevents damage to the backing member and bonding material by applying the solution only to the silicon surface with rollers, pressurizing the backing member, ensuring the solution evaporates before capillary action can draw it into gas holes, or applying corrosion inhibitors to the backing member and bonding material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a cleaning solution is applied to the silicon surface to remove polymer deposits and restore etch performance, then etch rate and etch uniformity are improved, but the backing member and bonding material may be damaged by the cleaning solution
Solution Approach 1:
The cleaning process is segmented into distinct zones: the cleaning solution is applied only to the silicon surface area while the backing member and bonding material are excluded from contact. This spatial segmentation allows effective cleaning of the silicon surface without exposing sensitive components to damaging chemicals.
Solution Approach 2:
Different parts of the electrode assembly receive different treatments: the silicon surface receives the cleaning solution to remove polymer deposits, while the backing member and bonding material are protected from the solution. This localized application ensures each component is treated according to its specific requirements.
2Manufacturing precision
If the cleaning solution is applied generously to ensure complete coverage of the silicon surface, then cleaning effectiveness is improved, but the solution may penetrate into gas holes and damage the bonding material and backing member
Solution Approach 1:
Corrosion inhibitors are applied to the bonding material and backing member before the cleaning solution is introduced. This preliminary protective action prevents the cleaning solution from causing damage if it penetrates into gas holes or contacts these components during the cleaning process.
Solution Approach 2:
Corrosion inhibitors act as intermediary substances that form a protective barrier between the cleaning solution and the bonding material/backing member. This intermediary layer allows the cleaning solution to be applied generously for effective cleaning while preventing harmful chemical interactions with sensitive components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Restores process window etch rate and etch uniformity by effectively cleaning the silicon surfaces without damaging the backing or bonding materials, maintaining the integrity of the electrode assembly and enhancing plasma etch chamber performance.
Implementation Method 1
The cleaning solution to be applied to the silicon surface of the electrode assembly comprise various reactive chemicals, for example, acids, such as hydrofluoric acid, to dissolve impurities
Implementation Method 2
applying a volume of the cleaning solution to the silicon surface such that the cleaning solution evaporates before capillary action draws the cleaning solution into gas holes in the silicon surface and in contact with the bonding material and/or backing member
Implementation Method 3
applying a volume of the cleaning solution to the silicon surface such that the cleaning solution evaporates before capillary action draws the cleaning solution into gas holes
Data Source
AI summary
Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.