Semiconductor Bonding Groove Structure for Bubble-Free Alignment
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Solution Overview
Problem
Semiconductor devices with light emitting elements face challenges in achieving high positional accuracy during bonding due to air bubbles forming between the semiconductor elements and the substrate, which can hinder precise alignment and functionality.
Innovation Solution
A semiconductor device design featuring a planarized layer with insulating properties, where semiconductor elements are formed on one surface and a groove is created on the opposite surface outside the elements, allowing for air passage and preventing bubble formation during bonding, thereby enhancing positional accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a bonding object is bonded to the bonded object after the bonding object is produced, then the semiconductor device can be assembled, but air bubbles may occur preventing the bonding object from being transferred onto the bonded object with high positional accuracy
Solution Approach 1:
The groove is formed in advance on the bonded object before the bonding process. This preliminary structural preparation creates a designated air escape path that prevents air bubble formation during bonding, thereby ensuring high positional accuracy when transferring the bonding object onto the bonded object.
Solution Approach 2:
The groove structure extracts air from the bonding interface by providing a dedicated escape path. During the bonding process, air is removed from the interface between the bonding object and the bonded object through the groove, preventing air bubble formation and enabling precise positioning.
2Reliability
If the groove is formed in the bonded object, then air bubbles are prevented during bonding, but the structural complexity of the bonded object increases
Solution Approach 1:
Instead of modifying the entire bonded object structure, the groove is localized to specific regions where air accumulation is most likely to occur. This localized approach maintains bonding quality by preventing air bubbles only where necessary, while minimizing the increase in overall structural complexity.
Data Source
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AI summary
A semiconductor device includes: a planarized layer having insulating properties, the planarized layer having a first surface and a second surface opposite the first surface; a plurality of semiconductor elements formed on the first surface of the planarized layer; and a groove provided in the second surface of the planarized layer. The groove is formed in a region outside the plurality of semiconductor elements as viewed in a direction perpendicular to the first surface.