Bonding Layer Interconnect Layout for 3D Memory Routing Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The increasing number of stacking layers in 3D memory devices leads to higher manufacturing costs and process complexity due to the demand for more back-end-of-line metal routing, which affects conductivity and increases resistance in metal traces.

Innovation Solution

The semiconductor structure incorporates a bonding layer with a combination of active and dummy bonding contacts, allowing some interconnection portions to be routed through the bonding layer, reducing the number of routing layers in the interconnection layer and maintaining trace width to minimize resistance and fabrication complexity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the number of stacking layers is increased to improve storage density, then storage density is improved, but manufacturing cost and process complexity increase due to more back-end-of-line metal routing

Engineering Contradiction:
Improvestorage densityVSAvoidprocess complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent routes interconnection portions through the bonding layer (vertical dimension) instead of only within the interconnection layer (horizontal dimension). This dimensional transition allows signal paths to bypass congested routing layers, reducing the number of required metal routing layers as stacking layers increase, thereby lowering process complexity while maintaining storage density improvements

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If more back-end-of-line metal routing is added to support increased stacking layers, then electrical connectivity is maintained, but resistance increases and conductivity decreases due to reduced trace width

Engineering Contradiction:
Improveelectrical connectivityVSAvoidresistance
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

By transitioning routing from the horizontal interconnection layer to the vertical bonding layer, the patent creates shorter and more direct signal paths. This dimensional change reduces the total trace length and maintains adequate trace widths, thereby reducing resistance and improving conductivity while preserving electrical connectivity across increased stacking layers

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If the number of routing layers is increased to accommodate more interconnections, then connectivity is improved, but fabrication complexity and manufacturing cost increase

Engineering Contradiction:
ImproveconnectivityVSAvoidfabrication complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The bonding layer is given a dual function: it serves both as a mechanical bonding interface between stacked structures and as an interconnection routing layer. This multi-functionality eliminates the need for additional dedicated routing layers, reducing fabrication complexity and manufacturing cost while maintaining comprehensive connectivity across all stacking layers

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250372513A1Semiconductor structures and fabrication methods thereof, semiconductor devices and fabrication methods thereof
Publication Date: 2025.12.04 YANGTZE MEMORY TECH CO LTD
  • US20250372513A1 patent drawing
  • US20250372513A1 patent drawing
  • US20250372513A1 patent drawing

AI summary

The present disclosure provides a semiconductor structure and a fabrication method thereof, a semiconductor device and a fabrication method thereof, and relate to the technical field of semiconductors. The semiconductor structure includes an interconnection layer and a bonding layer. The interconnection layer includes a first interconnection portion and a second interconnection portion. The bonding layer includes a bonding portion and a third interconnection portion. The first interconnection portion is connected with the second interconnection portion through the third interconnection portion. In the semiconductor structure provided by an example of the present disclosure, interconnection portions in the interconnection layer can be reduced by disposing the third interconnection portion in the bonding layer, thereby reducing the cost.