Bonding Structure Openings With Multi-Step Etching and Oxide-Rich Liner
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Solution Overview
Problem
Existing methods for forming bonding structures in system-on-integrate-chip (SoIC) packages are inadequate in ensuring satisfactory electrical connectivity and reducing defects such as cracks, peelings, and wrappage, particularly in the formation of conductive pads and bonding structures.
Innovation Solution
A method involving the formation of a funnel-shape trench through a multi-layer dielectric structure using multiple etching processes with specific etchants and conditions to expose a conductive pad, incorporating an oxide-rich liner to improve adhesion and reduce defects, and forming a multi-layer dielectric structure with specific layers to enhance adhesion and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing methods are used to form bonding structures, then manufacturing process is simple, but electrical connectivity and reliability are insufficient
Solution Approach 1:
The patent divides the bonding structure formation into multiple distinct layers including oxide-rich liner layer, nitride layer, and copper layer, each formed by separate deposition processes. This segmentation allows each layer to be optimized independently for its specific function, improving overall electrical connectivity and reliability while managing manufacturing complexity through systematic process breakdown
Solution Approach 2:
The patent performs preliminary actions by forming the oxide-rich liner layer and nitride layer before forming the copper bonding structure. These preliminary layers are deposited and patterned in advance to prepare the substrate, ensuring proper adhesion and electrical properties before the final copper structure is created, thereby improving reliability
2Reliability
If conventional etching is used, then process is straightforward, but defects such as cracks, peelings, and wrappage occur
Solution Approach 1:
The patent applies local quality by creating an oxide-rich liner layer with specific compositional characteristics (higher oxygen content) at the interface between dielectric layers. This localized modification of material properties at the bonding interface improves adhesion and prevents defects like cracks and peelings, while the etching process is precisely controlled to affect only specific regions
Solution Approach 2:
The patent uses composite materials by combining oxide-rich liner layer, nitride layer, and copper layer in a multi-layer structure. Each material contributes specific properties: the oxide-rich layer provides adhesion, the nitride layer provides structural stability, and the copper layer provides electrical conductivity. This composite approach reduces defects while managing manufacturing precision requirements
3Reliability
If standard dielectric structure is used, then fabrication is easier, but adhesion and resolution are insufficient
Solution Approach 1:
The patent applies parameter changes by modifying the dielectric layer composition to create an oxide-rich liner layer with specific oxygen content parameters. This parameter modification improves adhesion between layers and enhances resolution during subsequent processing steps, while the fabrication process is adjusted to accommodate these parameter changes through controlled deposition conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces defects and enhances electrical connectivity by ensuring precise exposure of conductive pads without over-etching, thereby improving the reliability and performance of SoIC packages.
Implementation Method 1
performing a first etching process to form a first opening extending through the third dielectric structure and exposing the second etch stop layer, performing a second etching process to vertically extend the first opening to expose the first etch stop layer, performing a third etching process to further vertically extend the first opening to expose the conductive pad
Implementation Method 2
incorporating an oxide-rich liner to improve adhesion and reduce defects
Data Source
AI summary
A method includes forming a conductive pad over a substrate, forming a multi-layer passivation structure on the conducive pad, patterning a top portion of the multi-layer passivation structure to form a first opening, forming a mask film on sidewall surfaces of the patterned top portion of the multi-layer passivation structure, after the forming of the mask film, performing a first etching process to remove a portion of the multi-layer passivation structure directly under the first opening to form a second opening, after the performing of the first etching process, selectively removing the mask film, performing a second etching process to remove a portion of the multi-layer passivation structure directly under the second opening, thereby forming a third opening exposing the conductive pad, and forming a bonding structure in the third opening, where an etchant of the second etching process is different than an etchant of the first etching process.