Bonding Wire Resistance Control for Current Mirror Parasitic Shift

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Solution Overview

Problem

Current mirror circuits in semiconductor devices face issues with uneven electric current flow due to parasitic resistance from metal wiring, leading to shifts in the designated current rate, which conventional methods fail to fully address by only matching transistor characteristics.

Innovation Solution

The semiconductor device incorporates a current mirror circuit with controlled resistance values of bonding wires to correct the shift in output electric current caused by parasitic resistances, by adjusting the number, diameter, length, or material of the bonding wires to ensure the desired current flow, even when parasitic resistances are non-zero.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If transistors are made with equal channel lengths and widths to match characteristics, then transistor matching is improved, but current rate accuracy deteriorates due to parasitic resistance in metal wiring

Engineering Contradiction:
Improvetransistor characteristic matchingVSAvoidcurrent rate accuracy
Core Design Contradiction:
Measurement precisionVSManufacturing precision

Solution Approach 1:

The patent applies local quality by making the bonding wires have different resistance values tailored to specific circuit nodes. The first bonding wire connected to the first transistor has a different resistance than the second bonding wire connected to the second transistor, allowing each connection to be optimized for its specific parasitic resistance conditions while maintaining overall current mirror accuracy

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the resistance parameter of the bonding wires to compensate for parasitic resistance effects. By carefully selecting and controlling the resistance values of the bonding wires (making them unequal), the patent offsets the unwanted parasitic resistance in the metal wiring, thereby maintaining accurate current mirroring despite the presence of parasitic elements

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If bonding wire resistance is controlled to correct current shift, then current accuracy is improved, but device complexity increases

Engineering Contradiction:
Improveoutput current accuracyVSAvoidbonding wire configuration complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent utilizes parameter changes by controlling the resistance values of existing bonding wires to achieve current correction. Instead of adding new components, it adjusts the resistance parameter of the bonding wires (through selection, length, material, or cross-sectional area) to compensate for parasitic resistance, thereby maintaining current accuracy without significantly increasing device complexity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The bonding wires serve as intermediary elements that mediate between the external connection terminals and the current mirror circuit. By introducing controlled resistance in these intermediary bonding wires, the patent compensates for the parasitic resistance in the metal wiring, acting as a corrective mediator that maintains current accuracy

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively maintains the desired electric current rate by balancing the resistance values, preventing shifts and ensuring a stable output current, thereby overcoming the limitations of conventional methods.

Implementation Method 1

a resistance value of the bonding wire is controlled so that a shift of an output electric current of the current mirror circuit based on the parasitic resistance is corrected

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS7932771B2Semiconductor device
Publication Date: 2011.04.26 MITSUMI ELECTRIC CO LTD
  • US7932771B2 patent drawing
  • US7932771B2 patent drawing
  • US7932771B2 patent drawing

AI summary

A semiconductor device includes a semiconductor element including a current mirror circuit, a parasitic resistance formed at the current mirror circuit, and a connection terminal electrically connected to a part of the current mirror circuit via an electric conductor including a bonding wire, the connection terminal being configured to perform input and output relative to an outside of the semiconductor device; wherein a resistance value of the bonding wire is controlled so that a shift of an output electric current of the current mirror circuit based on the parasitic resistance is corrected.