Boost Converter Bypass NFET With Charge Pump Gate Control
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Solution Overview
Problem
Existing boost converters in battery-operated devices face inefficiencies when switching between boost and bypass modes, particularly due to high resistance in the bypass transistor, which affects power conversion efficiency and battery life.
Innovation Solution
Implementing a bypass transistor as an n-channel field effect transistor (NFET) with a charge pump circuit to regulate the gate-source voltage, reducing on-resistance and enhancing efficiency during the bypass mode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a bypass transistor is used to allow battery voltage to bypass the boost converter when input voltage is above threshold, then the boost converter can be turned off to improve efficiency, but the high resistance of the bypass transistor reduces power conversion efficiency
Solution Approach 1:
The patent changes the operating parameters of the bypass transistor by regulating its gate-source voltage using a charge pump circuit. By dynamically adjusting the gate voltage to optimal levels, the transistor's on-resistance is reduced, thereby improving power conversion efficiency during bypass mode operation while maintaining reliable voltage regulation.
2Use of energy by moving object
If the bypass switch is turned on when input voltage is above threshold, then the boost converter is turned off to reduce energy consumption, but the high resistance of the bypass transistor affects battery life
Solution Approach 1:
The charge pump circuit dynamically regulates the gate-source voltage of the bypass transistor to maintain optimal conduction conditions. This parameter optimization reduces the transistor's on-resistance, minimizing energy losses during bypass mode and thereby extending battery life while maintaining low energy consumption.
3Device complexity
If the bypass transistor is used to bypass the boost converter, then the circuit complexity is reduced by disabling the boost converter, but the high resistance of the bypass transistor reduces overall system efficiency
Solution Approach 1:
The patent introduces a charge pump circuit as an intermediary component to regulate the gate-source voltage of the bypass transistor. This mediator optimizes the transistor's electrical characteristics by providing precisely controlled gate voltage, thereby reducing on-resistance and improving power conversion efficiency without significantly increasing overall circuit complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The NFET bypass transistor maintains consistent output voltage and reduces resistance, improving power conversion efficiency and extending battery life by optimizing the bypass mode operation.
Implementation Method 1
A charge pump has an output coupled to the first terminal of the third transistor
Implementation Method 2
a bypass switch (e.g., a transistor) which, when closed, allows the battery's voltage to bypass the boost converter
Implementation Method 3
A capacitor has a terminal coupled to the first terminal of the first transistor and to the first terminal of the second transistor
Data Source
AI summary
A circuit includes a first transistor having a first terminal and a second terminal. The circuit includes a second transistor having a first terminal and a second terminal. The first terminal of the second transistor is coupled to the first terminal of the first transistor. A third transistor has a first terminal and a second terminal. The second terminal of the third transistor is coupled to the second terminal of the second transistor. A charge pump has an output coupled to the first terminal of the third transistor. A capacitor has a terminal coupled to the first terminal of the first transistor and to the first terminal of the second transistor.