Borazine-Based Thin Film Formation for Semiconductor Devices
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Solution Overview
Problem
The existing methods for forming thin films, such as insulating films for semiconductor devices, face challenges in achieving high hydrogen fluoride resistance and low dielectric constants while maintaining high productivity, particularly at low temperatures, due to the lengthy process cycles required for separately supplying boron, nitrogen, and carbon sources.
Innovation Solution
A method involving the formation of a thin film with a borazine ring skeleton by alternating cycles of supplying a source gas containing a predetermined element and a halogen group, and a reaction gas including a borazine compound, under conditions that maintain the borazine ring skeleton, allowing for the simultaneous introduction of silicon, boron, carbon, and nitrogen, thereby reducing process time and improving productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate boron, nitrogen, and carbon sources are supplied in alternating cycles, then high step coverage and film quality are achieved, but the process time increases and productivity decreases
Solution Approach 1:
The patent combines multiple element sources (boron, nitrogen, carbon) into a single borazine compound gas. This merging of previously separate gas supplies into one compound allows all three elements to be introduced simultaneously in a single cycle, eliminating the need for multiple alternating gas supply steps and thereby reducing process time while maintaining film quality.
Solution Approach 2:
The borazine compound serves multiple functions simultaneously: it provides boron, nitrogen, and carbon elements all in one gas supply. This multi-functionality replaces the need for separate specialized gases for each element, streamlining the film formation process and improving productivity without compromising the step coverage and film quality that resulted from the alternating supply method.
2Reliability
If low temperature is used for film forming, then high HF resistance and low dielectric constant are achieved, but the process requires precise control and longer time
Solution Approach 1:
By merging all necessary elements (Si, B, C, N) into the single borazine compound supply process, the patent enables complete film formation in one cycle at low temperature. This eliminates the need for multiple alternating cycles that would extend process time, thereby improving productivity while maintaining the low temperature conditions required for high HF resistance and low dielectric constant.
Solution Approach 2:
The patent changes the chemical composition parameter by using a borazine compound that contains all necessary elements in specific ratios. This parameter change allows the film to be formed with the desired composition (Si-B-C-N) in a single cycle at low temperature, achieving both high reliability (HF resistance) and improved productivity by eliminating multiple cycles.
3Shape
If multiple process gases are supplied alternately, then high step coverage is achieved, but the cycle time increases
Solution Approach 1:
The patent merges the supply of multiple process gases into a single borazine compound gas supply. This consolidation maintains the beneficial step coverage achieved by the alternating supply method while dramatically reducing the cycle time by eliminating the need to switch between multiple gases, as all elements are delivered simultaneously in one continuous supply.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of thin films with high HF resistance and low dielectric constants in a low-temperature range, enhancing productivity by eliminating the need for separate boron, nitrogen, and carbon sources and allowing for the creation of porous films with controlled dielectric constants.
Implementation Method 1
forming a thin film including a predetermined element and a borazine ring skeleton on a substrate by performing a cycle a first predetermined number of times, the cycle including supplying a source gas including the predetermined element and a halogen group to the substrate; and supplying a reaction gas including a borazine compound to the substrate
Data Source
AI summary
A method of manufacturing a semiconductor is provided. The method includes forming a thin film including a predetermined element and a borazine ring skeleton is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas including the predetermined element and a halogen group to the substrate and supplying a reaction gas including a borazine compound to the substrate under a condition where the borazine ring skeleton in the borazine compound is maintained.