Boron Arsenide Layer Structure for Passive Semiconductor Cooling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Next-generation semiconductor devices with high power densities face reliability and performance limitations due to thermal resistance, particularly in substrates, despite high thermal conductivity materials like SiC, and existing active thermal management systems are complex, expensive, and unreliable.
Innovation Solution
The implementation of a semiconductor device structure incorporating a boron arsenide (BAs) electrically insulating layer with excellent thermal conductivity, which is in thermal contact with the device buffer and channel layers, and potentially within vias, to enhance heat dissipation and reduce thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If active thermal management systems (thermoelectric elements, micro-channel liquid coolants, heat pipes) are used, then heat dissipation capability is improved, but device complexity increases, cost increases, and reliability decreases
Solution Approach 1:
The patent extracts the thermal management function from complex active systems and implements it through a simplified passive structure. A BAs buffer layer is inserted between the substrate and device channel layer to provide thermal conduction path, eliminating the need for thermoelectric elements, micro-channel coolants, and heat pipes while maintaining heat dissipation capability
Solution Approach 2:
The patent changes the thermal conduction parameter by introducing BAs material with superior thermal conductivity properties. The BAs layer provides a dedicated thermal conduction path with optimized thickness and material properties, enabling passive heat dissipation without active cooling components
2Temperature
If active thermal management systems are used, then heat dissipation capability is improved, but manufacturing cost increases
Solution Approach 1:
The patent removes expensive active cooling components (thermoelectric elements, micro-channel structures, heat pipes) and replaces them with a cost-effective BAs buffer layer that can be integrated into the existing semiconductor fabrication process, significantly reducing manufacturing cost while maintaining thermal management effectiveness
3Temperature
If active thermal management systems are used, then heat dissipation capability is improved, but system reliability decreases
Solution Approach 1:
The patent eliminates moving parts, fluid channels, and complex active control mechanisms from the thermal management system. The passive BAs buffer layer structure has no moving components or fluid pathways, thereby improving reliability by removing potential failure points associated with active cooling systems
4Temperature
If substrate thermal resistance is reduced using high thermal conductivity materials like SiC, then heat dissipation is improved, but junction temperature rise and its impact on reliability still limit output power
Solution Approach 1:
The patent introduces a BAs buffer layer as an intermediary thermal conduction path between the substrate and device channel layer. This intermediate layer provides a dedicated low-resistance thermal pathway that complements the substrate's thermal conduction, effectively reducing junction temperature rise and its impact on device reliability and output power
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves semiconductor device reliability and performance by effectively managing heat through the use of BAs layers, providing a simpler, less expensive, and more reliable passive thermal management solution compared to active systems.
Implementation Method 1
a BAs electrically insulating layer in thermal contact with the device buffer layer and the device channel layer
Data Source
AI summary
A semiconductor device is provided with a first layer having a first layer conductive contact and being doped at a first concentration of a first dopant type. The first dopant type being a P type dopant. A second layer is on top the first layer and being doped at a second concentration of the first dopant type. The second concentration being less than the first concentration. A third layer is on top of the second layer and having a third layer conductive contact and being doped with a second dopant type, the second dopant type being an N type dopant. A fourth layer is on top of the third layer and having a fourth layer conductive contact and being doped with the first dopant type, wherein at least one of the first and second layers is a boron arsenide (BAs) layer.