Dense Boron Carbide Edge Ring for Semiconductor Plasma Etching
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Solution Overview
Problem
Conventional edge rings used in semiconductor manufacturing processes, made from materials like single-crystal silicon, quartz, or chemical-vapor-deposited silicon carbide, are prone to excessive etching under harsh plasma conditions, requiring frequent replacement and increasing production costs, while boron carbide-based edge rings with pores generate particles during plasma processing, leading to defective products.
Innovation Solution
A dense boron carbide-based edge ring is developed with a multi-layer structure comprising a boron carbide base layer, a mixed layer formed by chemical vapor deposition (CVD), and a denser surface layer, which suppresses peeling and particle generation by adjusting sintering temperature and pressure conditions to control resistance, density, and permittivity, thereby reducing defective product rates and maintenance needs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials (single-crystal silicon, quartz, CVD SiC) are used for edge rings, then the edge ring can be manufactured, but excessive etching occurs under harsh plasma conditions requiring frequent replacement
Solution Approach 1:
The patent uses a composite structure combining sintered boron carbide base material with CVD-deposited boron carbide surface layer. This composite approach leverages the bulk properties of sintered material while providing a dense, etching-resistant surface, resolving the contradiction between manufacturability and plasma resistance durability.
Solution Approach 2:
The patent changes the density parameter of the surface layer through CVD deposition, creating a dense surface layer (density ≥ 2.0 g/cm³) compared to the porous sintered base material. This parameter change enhances plasma resistance without compromising the overall structural integrity and manufacturability of the edge ring.
2Ease of manufacture
If boron carbide with pores in sintered body is used for edge ring, then manufacturing is simplified, but particles are generated during plasma process causing defective products
Solution Approach 1:
The patent applies local quality by creating a dense surface layer on the surface of the sintered boron carbide base material. The base material maintains its porous structure for ease of manufacture, while the surface layer provides particle-free plasma resistance, thus resolving the contradiction between manufacturing simplicity and particle generation.
Solution Approach 2:
The patent addresses the particle generation issue by adding a surface dimension through CVD deposition. The porous structure exists in the bulk (three-dimensional) for manufacturability, while the dense surface layer (two-dimensional surface) prevents particle generation during plasma processing.
3Reliability
If expensive materials like yttria and sapphire are used for edge rings, then plasma resistance is improved, but economic feasibility deteriorates
Solution Approach 1:
The patent replaces expensive materials (yttria, sapphire) with boron carbide, which is more economically feasible. By applying CVD surface treatment, the material achieves comparable plasma resistance without the high cost of exotic materials, resolving the contradiction between reliability and economic feasibility.
4Ease of manufacture
If single-crystal and columnar silicon or quartz are used for edge rings, then manufacturing is straightforward, but excessive etching occurs under plasma conditions
Solution Approach 1:
The patent creates a composite structure where sintered boron carbide provides ease of manufacture and structural integrity, while the CVD-deposited boron carbide surface layer provides exceptional etching resistance. This composite approach resolves the contradiction between manufacturing simplicity and plasma etching resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dense boron carbide edge ring effectively minimizes particle generation and defective product rates by preventing cracking and surface peeling, allowing for uniform plasma formation and reduced arcing, thus enhancing semiconductor manufacturing efficiency and reducing equipment maintenance.
Implementation Method 1
forming a mixed layer on the surface of the base layer by chemical vapor deposition (CVD)
Implementation Method 2
forming a denser surface layer on the surface of the mixed layer by CVD
Implementation Method 3
which is formed of boron carbide powder and has a low density
Data Source
AI summary
Proposed is an edge ring for a semiconductor manufacturing process, and specifically, to an edge ring for a semiconductor manufacturing process, which has a denser surface structure by forming a denser boron carbide surface layer on the surface of a sintered body (base layer) formed of boron carbide powder and forming a mixed layer for preventing peeling between the base layer and the surface layer and improving physical properties therebetween, and thus the boron carbide sintered body is prevented from being cracked during a harsh plasma process, and particle generation caused by the cracking is effectively suppressed, and as a result, a defective product rate can be reduced, and a manufacturing method thereof.