Boron-Doped Interlayer Insulating Film for Semiconductor Warping
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Solution Overview
Problem
Three-dimensional semiconductor memory devices face warping issues due to increased stress from laminating materials, which complicates the manufacturing process and affects the structural integrity of the device.
Innovation Solution
Incorporating a second interlayer insulating film with boron, specifically with a concentration of 5.5E21 to 8.5E21 atoms/cm3, to reduce stress and prevent warping by stabilizing the laminated structure during thermal processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the thickness of the laminating direction is increased to enhance storage capacity, then the storage capacity is improved, but the stress generated by the laminate material increases causing warping of the laminated structure
Solution Approach 1:
The patent changes the chemical composition parameters of the interlayer insulating film by incorporating boron at a specific concentration range (5.5E21 to 8.5E21 atoms/cm³). This parameter change modifies the stress characteristics of the laminate material, enabling the structure to maintain stability and resist warping even when the thickness in the laminating direction is increased to enhance storage capacity.
2Quantity of substance
If more laminate materials are used to increase storage capacity, then the storage capacity is improved, but the stress and warping of the structure increases
Solution Approach 1:
The patent modifies the material composition parameters by doping boron into the interlayer insulating film at a controlled concentration. This parameter change alters the stress generation characteristics of the laminate materials, allowing multiple layers to be stacked for increased storage capacity while maintaining manageable stress levels that prevent excessive warping.
3Quantity of substance
If the laminated structure thickness is increased, then the storage capacity is improved, but the manufacturing precision decreases due to warping
Solution Approach 1:
The patent changes the compositional parameters of the interlayer insulating film by incorporating boron at a specific concentration range. This modification stabilizes the laminated structure during thermal processes and reduces warping, thereby maintaining manufacturing precision and structural integrity even when the thickness is increased to achieve higher storage capacity.
4Ease of manufacture
If conventional interlayer insulating films are used, then the manufacturing process is simple, but warping occurs due to stress in the laminated structure
Solution Approach 1:
The patent creates a composite interlayer insulating film by combining conventional insulating material with boron doping. This composite material approach maintains the ease of manufacture using standard semiconductor fabrication processes while adding boron to modify the stress characteristics, thereby preventing warping in the laminated structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of boron-doped interlayer insulating films significantly reduces warping in the laminated structure, maintaining structural integrity and enhancing the manufacturing process efficiency.
Implementation Method 1
a second interlayer insulating film is formed to cover the laminated body. The second interlayer insulating film includes boron
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor substrate and a laminated body. The laminated body is disposed on the semiconductor substrate. The laminated body includes a plurality of conducting layers and a first interlayer insulating film. The first interlayer insulating film is disposed between the plurality of conducting layers. A second interlayer insulating film is formed to cover this laminated body. The second interlayer insulating film includes boron.