Bridge-Layer Semiconductor Package for 3D Die Interconnection
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Solution Overview
Problem
The semiconductor industry faces challenges in creating smaller and more efficient packaging techniques for semiconductor dies to accommodate the increasing demand for higher integration densities and improved data processing capabilities.
Innovation Solution
A semiconductor package design featuring a bridge layer that allows for multiple interconnections between semiconductor dies, enabling both horizontal and vertical signal transfer paths through the use of a bridge layer and additional components like bridge dies and through dielectric vias, facilitating enhanced data processing capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional semiconductor packaging techniques are used, then manufacturing simplicity is maintained, but integration density and data processing capabilities are limited
Solution Approach 1:
The patent introduces a bridge layer structure that enables three-dimensional interconnection between semiconductor dies. Through dielectric vias penetrating the bridge layer, signal paths are created in the vertical dimension, complementing horizontal connections. This dimensional transition allows multiple dies to be interconnected in a stacked configuration, dramatically increasing integration density and data processing capabilities while managing complexity through systematic layering.
Solution Approach 2:
The bridge layer acts as an intermediary structure between multiple semiconductor dies. It provides a platform with through dielectric vias that enables indirect communication between dies that would otherwise require direct contact. This mediator approach allows flexible routing of signals and power between dies, enhancing integration density without requiring complex direct inter-die bonding arrangements.
2Quantity of substance
If integration density is increased through iterative reduction of minimum feature size, then more components can be integrated into a given area, but further miniaturization becomes increasingly difficult
Solution Approach 1:
Instead of continuing to reduce feature sizes in the planar dimension, the patent transitions to three-dimensional integration using bridge layers and through dielectric vias. This allows multiple layers of semiconductor dies to be stacked and interconnected vertically, effectively increasing integration density by utilizing the vertical dimension rather than continuing aggressive planar scaling which approaches physical manufacturing limits.
3Productivity
If additional signal transfer paths are created through bridge layers and through dielectric vias, then data processing capabilities are enhanced, but manufacturing complexity increases
Solution Approach 1:
The patent segments the interconnection function across multiple distinct layers: semiconductor dies, bridge layer, through dielectric vias, and encapsulant. Each layer performs a specific function - dies contain active circuits, bridge layer provides structural support and routing, through dielectric vias enable vertical connections, and encapsulant protects the assembly. This segmentation allows each component to be manufactured and tested independently before assembly, managing overall fabrication complexity while enabling multiple signal transfer paths.
Data Source
AI summary
A semiconductor package includes a plurality of first semiconductor dies, a plurality of first bonding pads, a bridge layer, a plurality of second bonding pads and a plurality of second semiconductor dies. The first bonding pads are disposed on the first semiconductor dies. The bridge layer is disposed on the first bonding pads, wherein the bridge layer is electrically connected to the first semiconductor dies through the first bonding pads. The second bonding pads are disposed on the bridge layer, wherein the second bonding pads are electrically connected to the first bonding pads through the bridge layer. The second semiconductor dies are disposed on and electrically connected to the second bonding pads, wherein an active surface of the first semiconductor dies is facing an active surface of the second semiconductor dies.