Bridge Rectifier Common Diode Substrate Integration
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Solution Overview
Problem
The manufacturing process of traditional bridge rectifiers is complex due to the need for integrating four individual diode dies, which increases the number of components and complexity.
Innovation Solution
A bridge rectifier design utilizing two diode dies, a common P-type diode and a common N-type diode, with shared doping regions and metal layers, reducing the number of diodes required and simplifying the manufacturing method by using trench formation and doping techniques on N-type substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If four individual diode dies are integrated to form a traditional bridge rectifier, then the rectifying function is achieved, but the manufacturing process becomes complex and the number of components increases
Solution Approach 1:
The patent merges four separate diode dies into a single integrated bridge rectifier structure by forming P-type and N-type doping regions directly in a semiconductor substrate. This integration eliminates the need for separate diode components and their associated soldering connections, thereby reducing manufacturing complexity while maintaining the rectifying function.
Solution Approach 2:
The semiconductor substrate serves multiple functions simultaneously: it provides the structural base, contains all P-type and N-type doping regions, and forms all four diode junctions required for bridge rectification. This multi-functionality reduces the overall component count and simplifies the manufacturing process.
2Ease of manufacture
If four individual diode dies are soldered together with lead frames, then the bridge rectifier structure is formed, but the manufacturing steps increase and production time is extended
Solution Approach 1:
The patent performs preliminary doping actions during substrate fabrication to pre-form all P-type and N-type regions in their final positions. This preliminary action eliminates the need for subsequent assembly steps involving separate diode dies and lead frames, thereby reducing manufacturing time and improving ease of manufacture.
Solution Approach 2:
The invention extracts and eliminates the separate diode die components and lead frame assembly steps from the manufacturing process. By forming all diode structures directly in the substrate, the patent removes the time-consuming soldering and assembly operations while maintaining the functional equivalence of the traditional four-die bridge rectifier.
3Reliability
If traditional P-type substrates are used with four separate diodes, then the rectifier function is achieved, but the resistance is higher and current transportation speed is lower
Solution Approach 1:
The patent changes the substrate type from traditional P-type to N-type, which fundamentally alters the carrier concentration and mobility parameters. N-type substrates provide higher electron carrier density and mobility, thereby reducing resistance and increasing current transportation speed while maintaining the rectifier function through properly configured P-type and N-type doping regions.
Solution Approach 2:
The patent applies local quality by creating specific P-type doping regions within the N-type substrate precisely where needed for diode junction formation. This localized P-type doping maintains the rectifying function at specific locations while the overall N-type substrate provides high-speed current transportation pathways.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design simplifies the manufacturing process, reduces the number of diodes, and maintains the rectifying function, providing lower resistance and higher current transportation speed due to the use of N-type substrates with more electron carriers.
Implementation Method 1
two sides of each N-type substrates are performed doping to from a N-type heavy doping in one side and a P-type doping in the other side respectively
Data Source
AI summary
A bridge rectifier including a common P-type diode, a common N-type diode, two first metal layers, two pairs of second metal layers, two AC inputs and two DC outputs. The P-type diode includes a common P-type doping region, a pair of first N-type substrate regions and a pair of P-type doping regions. The N-type diode includes a common N-type doping region, a pair of second N-type substrate regions and a pair of N-type doping regions. The first metal layers connect to the common N-type doping region and the common P-type doping region. The second metal layers connect to the P-type doping region and the N-type doping region. Two AC inputs connect to one of the second metal layers of the P-type diode and one of the second metal layers of the N-type diode respectively. Two DC inputs connect to the first metal layers respectively.