Bridged Gate Line Structure for Dense Nanosheet Transistors
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Solution Overview
Problem
The semiconductor industry faces challenges in scaling down integrated circuit manufacturing due to increased complexity and the need for advanced processing techniques that allow for smaller geometry sizes and higher functional density, which existing methods struggle to efficiently address.
Innovation Solution
The method involves forming a semiconductor device using a process that includes forming an epitaxial stack with alternating layers of different compositions, patterning semiconductor fins, and creating gate structures with bridge portions to provide structural support, allowing for the formation of nanosheet channels and improving device stability and density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate lines are formed in multi-gate transistor structures, then device density and functionality are improved, but structural stability deteriorates due to collapse from isolation feature consumption and surface tension forces
Solution Approach 1:
The gate line is divided into multiple segments with bridge portions connecting adjacent segments. This segmentation allows each gate line segment to maintain structural integrity through the bridge portions while enabling the overall high-density device configuration. The bridge portions act as support structures that prevent collapse of individual gate line segments during fabrication.
Solution Approach 2:
Bridge portions are introduced as intermediary structures between adjacent gate lines. These bridge portions serve as mediators that provide mechanical support and prevent collapse of the gate lines by distributing the surface tension forces and counteracting the consumption of isolation features. The bridge portions are formed using spacer structures that are deposited and patterned between gate lines.
2Productivity
If gate lines are closely spaced to increase device density, then productivity is improved, but manufacturing precision deteriorates due to increased susceptibility to collapse
Solution Approach 1:
The gate line structure is segmented with bridge portions connecting adjacent segments, creating a modular architecture that maintains precision even at close spacings. Each segment can be independently controlled during fabrication while the bridge portions ensure overall structural integrity, enabling high device density without sacrificing manufacturing precision.
Solution Approach 2:
Bridge portions are formed in advance during the fabrication process using spacer structures that are deposited and patterned before final gate line formation. This preliminary action establishes the support structure needed to prevent collapse during subsequent processing steps, ensuring manufacturing precision is maintained even when gate lines are closely spaced.
3Ease of manufacture
If isolation features are consumed during fabrication, then manufacturing process is simplified, but gate line stability deteriorates due to loss of support structure
Solution Approach 1:
Bridge portions serve as intermediary support structures that compensate for the consumption of isolation features. These bridge portions are formed using spacer structures that are deposited between gate lines and provide the necessary mechanical support to prevent collapse during fabrication processes where isolation features are consumed. The bridge portions act as mediators that maintain gate line stability despite the simplified fabrication process.
Solution Approach 2:
The bridge portion support structure is formed in advance using spacer structures that are deposited and patterned before the isolation feature consumption step. This preliminary action establishes the support mechanism needed to counteract the effects of isolation feature consumption, allowing the fabrication process to proceed simply while maintaining gate line stability through the pre-formed bridge portions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of semiconductor devices with enhanced stability and density, reducing defects and process complexity, while allowing for smaller geometry sizes and higher functional density, thus addressing the scaling challenges in IC manufacturing.
Implementation Method 1
forming an epitaxial stack with alternating layers of different compositions
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, an isolation feature, gate lines, and a first gate structure. The isolation feature is over the semiconductor substrate and surrounding an active region of the semiconductor substrate. The gate lines extend across the active region of the semiconductor substrate. The first gate structure is over the isolation feature. The first gate structure comprises a first gate line, a second gate line, and a first bridge portion, the first and second gate lines are substantially parallel with the gate lines, and the first bridge portion connects the first gate line to the second gate line.